Consideration of recovery effects during NBTI measurements for accurate lifetime predictions of state-of-the-art pMOSFETs

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2007, Pages 288-292

  Heinrigs, Wolfgang ^a   Reisinger, Hans ^a   Gustin, Wolfgang ^a   Schlünder, Christian ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS CURRENTS; ELECTRIC POTENTIAL; SEMICONDUCTOR DEVICE MODELS; SERVICE LIFE; THERMODYNAMIC STABILITY; TIME DELAY;

DEVICE STRESS; MEASUREMENT VALUES; PARAMETER DEGRADATION; TECHNOLOGY QUALIFICATIONS; VOLTAGE ACCELERATION;

MOSFET DEVICES;

EID: 34548803579     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2007.369906     Document Type: Conference Paper

References (10)

1. [1 ] C. Schlünder, "Mixed Signal Circuit Reliability-From Device Stress Conditions to IC-Failure", Tutorial Notes International Reliability Physics Symp. (IRPS), April 17th, San Jose, 2005, pp. 1-18 and March 26th, San Jose, 2006, Tp. 121, pp. 1-20
2. V. Huard et al "NBTI degradation: From physical mechanism to modelling", Microelectronics and Reliability 46, 2005, pp. 1-23
3. J.G. Massey, "NBTI: what we know and what we need to know - a tutorial addressing the current understanding and challenges for the rature", IEEE International Integrated Reliability Workshop (IRW) Final Report, 18-21 Oct. 2004, pp. 199-211
4. A.T. Krishnan et al., "NBTI Impact on Transistor and circuit: models, mechanisms and scaling effects [MOSFETs]", IEEE International Electron Devices Meeting (IEDM) Technical Digest, 8-10 Dec. 2003, pp. 14.5.1-14.5.4
5. G. La Rosa et al., "Impact of NBTI Induced Statistical Variation to SRAM Cell Stability", Proceedings International Reliability Physics Symposium (IRPS), 2006, pp. 282-286
6. C. Schlunder et al., "Trapping Mechanisms in Negative Bias Temperature Stressed p-MOSFETs", ESREF 1999 and Microelectronics Reliability 39, 1999, pp. 821-826
7. International Technology Roadmap for Semiconductors, Edition 2006, http://public.itrs.net
8. S.Rangan et al "Universal recovery behavior of negative bias temperature instability [PMOSFETs]", Technical Digest IEEE International Electron Devices Meeting (IEDM) 8-10 Dec. 2003, pp. 14.3.1-14.3.4
9. JH. Stathis et al "The Negative Bias Temperature Instability in MOS devices: A Review" Microelectronics and Reliability 46, 2005, pp. 270-286
10. H. Reisinger et al. "Analysis of NBTI degradation- and recovery-behavior based on ultra fast VT-measurements" Proceedings International Reliability Physics Sympoisum (IRPS), 2006, pp. 448-453