Observation of near interface oxide traps in single crystalline Nd2 O3 on Si(111) by quasistatic C-V method

Applied Physics Letters

Volumn 93, Issue 8, 2008, Pages

  Sun, Qing Qing ^a   Laha, Apurba ^b   Ding, Shi Jin ^a   Zhang, David Wei ^a   Osten, H Jörg ^b   Fissel, A ^b  

^a FUDAN UNIVERSITY   (China)

^b LEIBNIZ UNIVERSITY HANNOVER   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACE OXIDE; SINGLE-CRYSTALLINE;

OZONE WATER TREATMENT;

EID: 51349166143     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2976325     Document Type: Article

References (22)

1. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 89, 5243 (2001).
2. International Technology Roadmap for Semiconductor, 2005, See Table 66 for new gate stack processes and materials.
3. M. Yang, M. Ieong, L. Shi, K. Chan, V. Chan, A. Chou, E. Gusev, K. Jenkins, D. Boyd, Y. Ninomiya, D. Pendleton, Y. Surpris, D. Heenan, J. Ott, K. Guarini, C. D'Emic, M. Cobb, P. Mooney, B. To, N. Rovedo, J. Benedict, R. Mo, and H. Ng, IEEE International Electron Devices Meeting (unpublished), pp. 453-456 (2003).
4. M. Yang, E. P. Gusev, M. K. Ieong, O. Gluschenkov, D. C. Boyd, K. K. Chan, P. M. Kozlowski, C. P. D'Emic, R. M. Sicina, P. C. Jamison, and A. I. Chou, IEEE Electron Device Lett. 24, 339 (2003).
5. H. Kim, A. Marshall, P. C. McIntyre, and K. C. Saraswat, Appl. Phys. Lett. 84, 2064 (2004).
6. S. Toyoda, J. Okabayashi, H. Kumigashira, M. Oshima, K. Yamashita, M. Niwa, K. Usuda, and G. L. Liu, J. Appl. Phys. 97, 104507 (2005).
7. D. A. Neumayer and E. Cartier, J. Appl. Phys. 90, 1801 (2001).
8. M. R. Visokay, J. J. Chambers, A. L. P. Rotondaro, A. Shanware, and L. Colombo, Appl. Phys. Lett. 80, 3183 (2002).
9. C. S. Kang, H. J. Cho, R. Choi, Y. H. Kim, C. Y. Kang, S. J. Rhee, C. W. Choi, M. S. Akbar, and J. C. Lee, IEEE Trans. Electron Devices 51, 220 (2004).
10. N. J. Seong, W. J. Lee, and S. G. Yoon, J. Vac. Sci. Technol. B 24, 312 (2006).
11. X. F. Yu, C. X. Zhu, and M. B. Yu, Appl. Phys. Lett. 90, 103502 (2007).
12. H. J. Osten, E. Bugiel, M. Czernohorsky, Z. Elassar, O. Kirfel, and A. Fissel, in Top. Appl. Phys. 106, 101 (2007).
13. H. J. Osten, D. Kuhne, A. Laha, M. Czernohorsky, E. Bugiel, and A. Fissel, J. Vac. Sci. Technol. B 25, 1039 (2007).
14. M. E. Hunter, M. J. Reed, N. A. El-Masry, J. C. Roberts, and S. M. Bedair, Appl. Phys. Lett. 76, 1935 (2000).
15. V. Narayanan, S. Guha, N. A. Bojarczuk, and F. M. Ross, J. Appl. Phys. 93, 251 (2003).
16. H. J. Osten, E. Bugiel, M. Czernohorsky, Z. Elassar, O. Kirfel, and A. Fissel, in Rare Earth Oxide Thin Films: Growth, Characterization, and Applications 106, 101 (2007).
17. Q. Q. Sun, A. Laha, S. J. Ding, D. W. Zhang, H. J. Osten, and A. Fissel, Appl. Phys. Lett. 92, 152908 (2008).
18. A. Laha, H. J. Osten, and A. Fissel, Appl. Phys. Lett. 90, 113508 (2007).
19. N. L. Cohen, R. E. Paulsen, and M. H. White, IEEE Trans. Electron Devices 42, 2004 (1995).
20. A. Laha, A. Fissel, E. Bugiel, and H. J. Osten, Thin Solid Films 515, 6512 (2007).
21. D. K. Schroder, Semiconductor Material and Device Characterization (Wiley, New York, 1998), 373.
22. E. H. N. a. J. R. Brews, MOS Physics and Technology (Wiley, New York, 1982).