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Volumn 106, Issue , 2006, Pages 101-114

Molecular beam epitaxy of rare-earth oxides

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EID: 33750828709     PISSN: 03034216     EISSN: 14370859     Source Type: Book Series    
DOI: 10.1007/11499893_7     Document Type: Article
Times cited : (21)

References (22)
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    • A. Fissel, H. J. Osten, E. Bugiel: Towards understanding epitaxial growth of alternative high-k dielectrics on Si(001): application to praseodymium oxide, J. Vac. Sci. Technol. B 21, 1765 (2003) 106
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    • Study of interfacial reaction and its impact on electric properties of Hf-Al-O high-k gate dielectric thin films grown on Si
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    • Photoemission and ab initio theoretical study of interface and film formation during epitaxial growth and annealing of praseodymium oxide on Si(001)
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    • H. J. Osten, M. Czernohorsky, O. Kirfel, A. Fissel: unpublished 112
    • H. J. Osten, M. Czernohorsky, O. Kirfel, A. Fissel: unpublished 112


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