Structural and electrical characterizations of ultrathin HfO2 gate dielectrics treated by nitrogen-plasma atmosphere

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 1, 2006, Pages 312-315

  Seong, Nak Jin ^a   Lee, Won Jae ^b   Yoon, Soon Gil ^a  

^a Chungnam National University   (South Korea)

^b Dong Eui University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CHARGE; GATES (TRANSISTOR); METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; ULTRATHIN FILMS;

CHARGE DENSITY; ELECTRICAL PROPERTIES; GATE DIELECTRICS;

DIELECTRIC MATERIALS;

EID: 31544463309     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2151218     Document Type: Article

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