Efficient simulation of hole transport in strained Si and SiGe on insulator inversion layers

Solid-State Electronics

Volumn 52, Issue 10, 2008, Pages 1660-1668

  Pham, A T ^a   Jungemann, C ^b   Klawitter, M ^a   Meinerzhagen, B ^a  

^a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

^b BUNDESWEHR UNIVERSITY MUNICH   (Germany)

Author keywords

Fourier expansion method; pMOS; Semiclassical transport; Semiconductor on insulator; Strained Si; Strained SiGe

Indexed keywords

DATA STRUCTURES; DISTRIBUTION FUNCTIONS; SILICON; SILICON ALLOYS;

FOURIER EXPANSION METHOD; PMOS; SEMICLASSICAL TRANSPORT; SEMICONDUCTOR-ON-INSULATOR; STRAINED SI; STRAINED SIGE;

MOSFET DEVICES;

EID: 51049101026     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2008.06.016     Document Type: Article

References (23)

1. Oberhuber R., Zandler G., and Vogl P. Subband structure and mobility of two-dimensional holes in strained Si/SiGe MOSFETs. Phys Rev B 58 (1998) 9941-9948
2. Krishnan S., Vasileska D., and Fischetti M.V. Band-structure and quantum effects on hole transport in p-MOSFETs. J Comput Electron 4 1-2 (2005) 27-30
3. Baraff G.A. Maximum anisotropy approximation for calculating electron distributions; Application to high field transport in semiconductors. Phys Rev 133 (1964) A26-A33
4. Goldsman N., Henrickson L., and Frey J. A physics-based analytical/numerical solution to the Boltzmann transport equation for use in device simulation. Solid-State Electron 34 (1991) 389-396
5. Gnudi A., Ventura D., Baccarani G., and Odeh F. Two-dimensional MOSFET simulation by means of a multidimensional spherical harmonics expansion of the Boltzmann transport equation. Solid-State Electron 36 (1993) 575-581
6. Jungemann C., Pham A.T., Meinerzhagen B., Ringhofer C., and Bollhöfer M. Stable discretization of the Boltzmann equation based on spherical harmonics, box integration, and a maximum entropy dissipation principle. J Appl Phys 100 (2006) 024502-1-024502-13
7. Pham A.T., Jungemann C., and Meinerzhagen B. Physics-based modeling of hole inversion layer mobility in strained SiGe on insulator. IEEE Trans Electron Dev 54 9 (2007) 2174-2182
8. Pham AT, Jungemann C, Meinerzhagen B. Modeling of hole inversion layer mobility in unstrained and uniaxially strained Si on arbitrarily oriented substrate. In Proceedings of ESSDERC; 2007.
9. Pham AT, Jungemann C, Meinerzhagen B. A fast k*p solver for hole inversion layers with an efficient 2D k-space discretization. J Comput Electron; 2007. online, doi:10.1007/s10825-007-0155-5.
10. Jungemann C., Pham A.T., and Meinerzhagen B. A linear response Monte Carlo algorithm for inversion layers and magnetotransport. J Comput Electron 54 6 (2006) 10.1007/s10825-007-0155-5
11. Brauer W., and Streitwolf H.W. Theoretische Grundlagen der Halbleiterphysik. 2nd ed. (1977), Vieweg, Braunschweig
12. Ando T., Fowler A., and Stern F. Electronic properties of two-dimensional systems. Rev Mod Phys 54 (1982) 437-672
13. Fischetti M.V., and Laux S.E. Band structure, deformation potentials, and carrier mobility in strained Si, Ge and SiGe alloys. J Appl Phys 80 (1996) 2234-2252
14. Fischetti M.V., Ren Z., Solomon P.M., Yang M., and Rim K. Six-band k · p calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness. J Appl Phys 94 (2003) 1079-1095
15. Wang E.X., Matagne P., Shifren L., Obradovic B., Kotlyar R., Cea S., et al. Physics of hole transport in strained silicon MOSFET inversion layers. IEEE Trans Electron Dev 53 8 (2006) 1840-1851
16. Bollhöfer M, Saad Y. ILUPACK - preconditioning software package. Release 1.1 available online at ; December 2004.
17. Varga R.S. Matrix iterative analysis. Series in automatic computation (1962), Prentice-Hall, Englewood Cliffs, New Jersey
18. Takagi S., Toriumi A., Iwase M., and Tango H. On the universality of inversion layer mobility in Si MOSFET's: Part I-Effects of substrate impurity concentration. IEEE Trans Electron Dev 41 (1994) 2357-2362
19. Irie H, Kita K, Kyuno K, Toriumi A. In-plane mobility anisotropy and universality under uni-axial strains in n- and p-MOS inversion layers on (1 0 0), (1 1 0), and (1 1 1) Si. In: IEDM Tech. Dig.; 2004.
20. Takagi S., Tezuka T., Irisawa T., Nakaharai S., Maeda T., Numata T., et al. Hole mobility enhancement of p-MOSFETs using global and local Ge-channel technologies. Mater Sci Eng B 135 (2006) 250-255
21. Aberg I., Chleirigh C.N., and Hoyt J.L. Ultrathin-body strained-Si and SiGe heterostructure-on-insulator MOSFETs. IEEE Trans Electron Dev 53 5 (2006) 1021-1029
22. Thompson SE, Suthram S, Sun Y, Sun G, Parthasarathy S, Chu M, et al. Future of strained Si/semiconductors in nanoscale MOSFETs. In: IEDM Tech. Dig.; 2006.
23. Assaderaghi F., Sinitsky D., Bokor J., Ko P.K., Gaw H., and Hu C. High-field transport of inversion-layer electrons and holes including velocity overshoot. IEEE Trans Electron Dev 44 4 (1997) 664-671