High-field transport of inversion-layer electrons and holes including velocity overshoot

IEEE Transactions on Electron Devices

Volumn 44, Issue 4, 1997, Pages 664-671

  Assaderaghi, Fariborz ^a,b,c   Sinitsky, Dennis ^b   Bokor, Jeffrey ^b   Ko, Ping K ^a,b   Gaw, Henry ^d   Hu, Chenming ^a,b  

^a IEEE   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c IBM   (United States)

^d INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRIC FIELD EFFECTS; OXIDES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DEVICE TESTING; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; SUBSTRATES; SURFACE ROUGHNESS; VELOCITY MEASUREMENT;

DEVICE CHANNEL LENGTH; GATE OXIDE; INVERSION LAYER ELECTRONS AND HOLES; VELOCITY OVERSHOOT; VERTICAL FIELD STRENGTH;

ELECTRON TRANSPORT PROPERTIES;

EID: 0031124705     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.563373     Document Type: Article

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