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Volumn 4, Issue 1-2, 2005, Pages 27-30

Band-structure and quantum effects on hole transport in p-MOSFETs

Author keywords

2D Monte Carlo; Hole transport; Six band k.p; Valence band structure

Indexed keywords


EID: 25144522733     PISSN: 15698025     EISSN: None     Source Type: Journal    
DOI: 10.1007/s10825-005-7101-1     Document Type: Article
Times cited : (5)

References (9)
  • 1
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    • "On the universality of inversion layer mobility in Si MOSFET's: Part I - Effects of substrate impurity concentration"
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    • S. Takagi et al., "On the universality of inversion layer mobility in Si MOSFET's: Part I-Effects of substrate impurity concentration," IEEE Trans. Electron Devices, 41 (12), 2357 (1994). 10.1109/16.337449
    • (1994) IEEE Trans. Electron Devices , vol.41 , Issue.12 , pp. 2357
    • Takagi, S.1
  • 2
    • 0026623576 scopus 로고
    • 1-xSi heterostructure inversion layers"
    • 10.1109/55.144950
    • 1-x/Si heterostructure inversion layers," IEEE Electron Device Lett., 13, 56 (1992). 10.1109/ 55.144950
    • (1992) IEEE Electron Device Lett. , vol.13 , pp. 56
    • Garone, P.M.1
  • 3
    • 0026156656 scopus 로고
    • "A gate-quality dielectric system for SiGe metal-oxide-semiconductor devices"
    • 10.1109/55.79571
    • S.S. Iyer et al., "A gate-quality dielectric system for SiGe metal-oxide-semiconductor devices," IEEE Electron Device Lett., 12, 246 (1991). 10.1109/55.79571
    • (1991) IEEE Electron Device Lett. , vol.12 , pp. 246
    • Iyer, S.S.1
  • 4
    • 0142077567 scopus 로고    scopus 로고
    • "50 nm high performance strained Si/SiGe pMOS devices with multiple quantum wells"
    • N. Collaert et al., "50 nm high performance strained Si/SiGe pMOS devices with multiple quantum wells," IEEE Trans. Electron Devices, 1, 190 (2002).
    • (2002) IEEE Trans. Electron Devices , vol.1 , pp. 190
    • Collaert, N.1
  • 5
    • 0000363279 scopus 로고    scopus 로고
    • "Subband structure and mobility of two-dimensional holes in strained Si/SiGe MOSFETs"
    • 10.1103/PhysRevB.58.9941
    • R. Oberhuber et al., "Subband structure and mobility of two-dimensional holes in strained Si/SiGe MOSFETs," Phys. Rev. B, 58 (15), 9941 (1998). 10.1103/PhysRevB.58.9941
    • (1998) Phys. Rev. B , vol.58 , Issue.15 , pp. 9941
    • Oberhuber, R.1
  • 6
    • 21844442543 scopus 로고    scopus 로고
    • "Self-consistent Subband Structure and Mobility of Two Dimensional Holes in Strained SiGe MOSFETs"
    • 10.1023/B:JCEL.0000011468.64475.94
    • S. Krishnan et al., "Self-consistent Subband Structure and Mobility of Two Dimensional Holes in Strained SiGe MOSFETs," Journal of Computational Electronics, 2, 443 (2003). 10.1023/ B:JCEL.0000011468.64475.94
    • (2003) Journal of Computational Electronics , vol.2 , pp. 443
    • Krishnan, S.1
  • 7
    • 25144468758 scopus 로고    scopus 로고
    • "Modeling strained SiGe p channel MOSFETs"
    • (submitted for publication)
    • 0S. Krishnan et al., "Modeling strained SiGe p channel MOSFETs," IEEE Transactions on Nanoelectronics (submitted for publication).
    • IEEE Transactions on Nanoelectronics
    • Krishnan, S.1
  • 8
    • 0043269756 scopus 로고    scopus 로고
    • "Six-band k· p calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness"
    • 10.1063/1.1585120
    • M.V. Fischetti et al., "Six-band k·p calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness," Journal of Applied Physics, 94, 1079 (2003). 10.1063/1.1585120
    • (2003) Journal of Applied Physics , vol.94 , pp. 1079
    • Fischetti, M.V.1
  • 9
    • 25144481263 scopus 로고    scopus 로고
    • "Self-consistent Quantum Mechanical Monte Carlo MOSFET Device Simulation"
    • 10.1023/B:JCEL.0000011406.20864.06
    • T. Ezaki, et al., "Self-consistent Quantum Mechanical Monte Carlo MOSFET Device Simulation," Journal. Of Computational Electronics, 2, 91 (2003). 10.1023/B:JCEL.0000011406.20864.06
    • (2003) Journal of Computational Electronics , vol.2 , pp. 91
    • Ezaki, T.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.