An explanation of the dependence of the effective saturation velocity on gate voltage in sub-0.1 μm metal-oxide-semiconductor transistors by quasi-ballistic transport theory

Microelectronics Reliability

Volumn 48, Issue 10, 2008, Pages 1641-1648

  Lau, W S ^a   Yang, Peizhen ^a   Ho, V ^b   Toh, L F ^b   Liu, Y ^b   Siah, S Y ^b   Chan, L ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTICS; DIELECTRIC DEVICES; ELECTRIC CONDUCTIVITY; EXPLOSIVES; SEMICONDUCTING INDIUM; SEMICONDUCTOR MATERIALS; STATISTICAL MECHANICS; TRANSISTOR TRANSISTOR LOGIC CIRCUITS; TRANSPORT PROPERTIES;

GATE VOLTAGES; INVERSION CHARGES; QUASI-BALLISTIC TRANSPORT;

TRANSISTORS;

EID: 50949117964     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2008.06.005     Document Type: Article

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