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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 4 B, 2003, Pages 2063-2066

Multi-subband effects on performance limit of nanoscale MOSFETs

(3) Natori, Kenji a Shimizu, Tomo a Ikenobe, Tsuyoshi a

a UNIVERSITY OF TSUKUBA (Japan)

Author keywords

Ballistic; Current voltage characteristics; MOS; MOSFET; Nanoscale; Scaling limit; Semiconductor device; Subband

Indexed keywords

APPROXIMATION THEORY; CALCULATIONS; CARRIER MOBILITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; INTEGRAL EQUATIONS; MATHEMATICAL MODELS; PERFORMANCE; SEMICONDUCTING SILICON; SURFACES; VELOCITY;

DRAIN CURRENT; MULTI SUBBAND EFFECTS; PERFORMANCE LIMIT;

MOSFET DEVICES;

EID: 0038686496 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.42.2063 Document Type: Article

Times cited : (23)

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