Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Model Based on a Physical Hieh-Field Carrier-Velocity Model

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 1, 2004, Pages 77-81

  Suzuki, Kunihiro ^a   Usuki, Tatsuya ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Mobility; MOSFET; Velocity saturation

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRONS; HOLE MOBILITY; ITERATIVE METHODS; LATTICE CONSTANTS; PARAMETER ESTIMATION; PROBLEM SOLVING;

MOBILITY; VELOCITY SATURATION;

MOSFET DEVICES;

EID: 1842811044     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.77     Document Type: Article

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