SCOPUS 정보 검색 플랫폼

Volumn 48, Issue 2, 2001, Pages 265-270

An accurate coulomb mobility model for mos inversion layer and its application to no-oxynitride devices

Author keywords

Device simulation; Impurity scattering; Inversion layer; Mobility model; MOSFET; Oxynitride device; Screening effect

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; COMPUTER SIMULATION; ELECTRIC VARIABLES MEASUREMENT; ELECTRON SCATTERING;

DEVICE SIMULATION; OXYNITRIDE DEVICES;

MOS DEVICES;

EID: 0035250064 PISSN: 00189383 EISSN: None Source Type: Journal
DOI: 10.1109/16.902725 Document Type: Article

Times cited : (12)

References (9)

1
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- Takagi, S.¹ Iwase, M.² Toriumi, A.³

2
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- A physicallybased mobility model for numerical simulation of nonplanar devices
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- IEEE Trans. Computer-Aided Design, Vol. 7, Pp. 1164-1171, 1988.
- Lombard, C.¹ Manzini, S.² Saporito, A.³ Vanzi, M.⁴

3
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- A unified mobility model for device simulation-I: Model equations and concentration dependence
- D. B. M. KlaassenA unified mobility model for device simulation-I: Model equations and concentration dependence Solid-State Electron., vol. 35, pp. 953-959, 1992.
- Solid-State Electron., Vol. 35, Pp. 953-959, 1992.
- Klaassen, D.B.M.¹

4
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- Semi-empirical local NMOS mobility model for 2-D device simulation incorporating screened minority impurity scattering
- S. A. Mujtaba, R. W. Dutton, and D. L. ScharfetterSemi-empirical local NMOS mobility model for 2-D device simulation incorporating screened minority impurity scattering in Proc. NUPAD, 1994, pp. 3-6.
- In Proc. NUPAD, 1994, Pp. 3-6.
- Mujtaba, S.A.¹ Dutton, R.W.² Scharfetter, D.L.³

5
- 0024684382
- A new approach to verify and derive a transverse-field-dependent mobility model for electrons in MOS inversion layers
- H. Shin, A. F. Tasch Jr., C. M. Maziar, and S. K. BanerjeeA new approach to verify and derive a transverse-field-dependent mobility model for electrons in MOS inversion layers IEEE Trans. Electron Devices, vol. 36, pp. 1117-1124, June 1989.
- IEEE Trans. Electron Devices, Vol. 36, Pp. 1117-1124, June 1989.
- Shin, H.¹ Tasch Jr., A.F.² Maziar, C.M.³ Banerjee, S.K.⁴

6
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- Universal mobility-field curves for electrons and holes in MOS inversion layers
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- Watt, J.T.¹ Plummer, J.D.²

7
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- Ph.D. dissertation, Stanford Univ., Stanford, CA, 1995.
- S. A. MujtabaAdvanced mobility models for design and simulation of deep submicrometer MOSFETs Ph.D. dissertation, Stanford Univ., Stanford, CA, 1995.
- Advanced Mobility Models for Design and Simulation of Deep Submicrometer MOSFETs
- Mujtaba, S.A.¹

8
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- Importance of Si-N atomic configuration at the Si/Oxynitride interfaces on the performance of scaled MOSFETs
- M. Takayanagi-Takagi and Y. ToyoshimaImportance of Si-N atomic configuration at the Si/Oxynitride interfaces on the performance of scaled MOSFETs in IEDM Tech. Dig., 1998, pp. 20.6.1-20.6.4.
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9
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- Rafferty, C.S.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.