New channel engineering for sub-100 nm MOS devices considering both carrier velocity overshoot and statistical performance fluctuations

IEEE Transactions on Electron Devices

Volumn 47, Issue 4, 2000, Pages 756-761

  Mizuno, Tomohisa ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; INTEGRATED CIRCUIT LAYOUT; SEMICONDUCTOR JUNCTIONS; SILICON ON INSULATOR TECHNOLOGY; STATISTICAL METHODS; THRESHOLD VOLTAGE;

CARRIER VELOCITY OVERSHOOTS; CHANNEL ENGINEERING; STATISTICAL PERFORMANCE FLUCTUATIONS;

MOSFET DEVICES;

EID: 0033887044     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.830990     Document Type: Article

References (9)

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