New Monte Carlo simulation technique for quasi-ballistic transport in ultrasmall metal oxide semiconductor field-effect transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 9 A, 2005, Pages 6463-6470

  Natori, Kenji ^a   Wada, Naoya ^a   Kurusu, Takashi ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

Ballistic transport; Monte Carlo simulation; MOSFET; Nanotechnology; Quasi ballistic transport; Semiconductor device; Silicon; Transistor

Indexed keywords

COMPUTER SIMULATION; MONTE CARLO METHODS; MOSFET DEVICES; PHONONS; RANDOM PROCESSES; UNCERTAIN SYSTEMS;

BALLISTIC TRANSPORT; QUASI-BALLISTIC TRANSPORT; SEMICONDUCTOR DEVICE;

BALLISTICS;

EID: 31544435179     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.6463     Document Type: Article

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