Temperature-insensitive refractive index of GaAsBi alloy for laser diode in WDM optical communication

Physica Status Solidi C: Conferences

Volumn 3, Issue 3, 2006, Pages 693-696

  Yamashita, K ^a   Yoshimoto, M ^a   Oe, K ^a  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH; ELECTROMAGNETIC DISPERSION; OPTICAL COMMUNICATION; REFRACTIVE INDEX; SEMICONDUCTOR LASERS; THERMAL EFFECTS; WAVELENGTH DIVISION MULTIPLEXING; ALLOYS; DISTRIBUTED FEEDBACK LASERS; GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM;

DISTRIBUTED FEEDBACK LASER DIODES; ENERGY SHIFT; TEMPERATURE-INSENSITIVE LASER DIODES;

SEMICONDUCTING GALLIUM COMPOUNDS; REFRACTIVE INDEX;

IN-MOLE-FRACTION; LASING WAVELENGTH; MOLE FRACTION; REFRACTIVE INDEX DISPERSION; REFRACTIVE-INDEX SPECTRA; SPECTRAL SHIFT; TEMPERATURE-INSENSITIVE; THERMO-OPTIC COEFFICIENTS;

EID: 33646201084     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200564110     Document Type: Conference Paper

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