Growth of metastable alloy InAsBi by low-pressure MOVPE

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 3 SUPPL. B, 1998, Pages 1608-1613

  Okamoto, Hiroshi ^a   Oe, Kunishige ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Droplet; Impurities; InAsBi; Metastable alloy; MOVPE; RBS; SEM EDX; SIMS; Whisker; X ray diffraction

Indexed keywords

EID: 0001218603     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.1608     Document Type: Article

References (17)

1. B. Joukoff and A. M. Jean-Louis: J. Cryst. Growth 12 (1972) 169.
2. J. L. Zilko and J. E. Greene: J. Appl. Phys. 51 (1980) 1549.
3. K. Oe, S. Ando and K. Sugiyama: Jpn. J. Appl. Phys. 20 (1981) L303.
4. K. Y. Ma, Z. M. Fang, R. M. Cohen and G. B. Stringfellow: J. Appl. Phys. 68 (1990) 4586.
5. K. T. Huang, C. T. Chiu, R. M. Cohen and G. B. Stringfellow: J. Appl. Phys. 75 (1994) 2857.
6. K. Oe and H. Asai: Symp. Record of Electronic Material Symp. '95, Izu-Nagaoka, p. 191.
7. K. Oe and H. Asai: IEICE Trans. Electron. E79-C (1996) 1751.
8. H. Asahi, K. Yamamoto, K. Iwata, S. Gonda and K. Oe: Jpn. J. Appl. Phys. 35 (1996) L876.
9. H. Asahi, M. Fushida, H. Koh, K. Yamamoto, K. Asami, S. Gonda and K. Oe: Proc. Int. Conf. Indium Phosphide and Related Materials, Cape Cod, 1997, p. 448.
10. K. Y. Ma, Z. M. Fang, R. M. Cohen and G. B. Stringfellow: J. Electron. Mater. 21 (1992) 143.
11. R. S. Wagner and W. C. Ellis: Appl. Phys. Lett. 4 (1964) 89.
12. K. Oe, Y. Shinoda and K. Sugiyama: Appl. Phys. Lett. 33 (1978) 962.
13. J. W. Matthews, S. Mader and T. B. Light: J. Appl. Phys. 41 (1970) 3800.
14. W. K. Chu, J. W. Mayer and M. A. Nicolet: Backscattering Spectrometry (Academic Press, 1978) Chap. 8, p. 269.
15. G. B. Stringfellow: J. Cryst. Growth 75 (1986) 91.
16. S. A. Barnett: J. Vac. Sci. Technol. A 5 (1987) 2845.
17. G. B. Stringfellow: J. Cryst. Growth 70 (1984) 133.