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Volumn 52, Issue 9, 2008, Pages 1443-1451

Status and challenges of phase change memory modeling

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE EQUIPMENT; FLASH MEMORY; MODELS; OPTIMIZATION; PULSE CODE MODULATION;

EID: 50649093094     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2008.04.020     Document Type: Article
Times cited : (19)

References (34)
  • 1
    • 0842309810 scopus 로고    scopus 로고
    • Current status of the phase change memory and its future
    • Lai S. Current status of the phase change memory and its future. IEDM Tech Dig (2003) 255-258
    • (2003) IEDM Tech Dig , pp. 255-258
    • Lai, S.1
  • 2
    • 33751334352 scopus 로고    scopus 로고
    • Atwood G, Bez R. Current status of chalcogenide phase change memory. In: Device research conference digest; 2005. p. 29-33.
    • Atwood G, Bez R. Current status of chalcogenide phase change memory. In: Device research conference digest; 2005. p. 29-33.
  • 3
    • 36049053305 scopus 로고
    • Reversible electrical switching phenomena in disordered structures
    • Ovshinsky S.R. Reversible electrical switching phenomena in disordered structures. Phys Rev Lett 21 (1968) 1450-1453
    • (1968) Phys Rev Lett , vol.21 , pp. 1450-1453
    • Ovshinsky, S.R.1
  • 4
    • 41149134446 scopus 로고    scopus 로고
    • Pellizzer F, Benvenuti A, Gleixner B, Kim Y, Johnson B, Magistretti M et al. A 90 nm phase change memory technology for stand-alone non-volatile memory applications. In: Symp VLSI Tech Dig; 2006. p. 122-3.
    • Pellizzer F, Benvenuti A, Gleixner B, Kim Y, Johnson B, Magistretti M et al. A 90 nm phase change memory technology for stand-alone non-volatile memory applications. In: Symp VLSI Tech Dig; 2006. p. 122-3.
  • 7
    • 21644479869 scopus 로고    scopus 로고
    • Highly manufacturable high density phase change memory of 64Mb and beyond
    • Ahn S.J., Song Y.J., Jeong C.W., Shin J.M., Fai Y., Hwang Y.N., et al. Highly manufacturable high density phase change memory of 64Mb and beyond. IEDM Tech Dig (2004) 907-910
    • (2004) IEDM Tech Dig , pp. 907-910
    • Ahn, S.J.1    Song, Y.J.2    Jeong, C.W.3    Shin, J.M.4    Fai, Y.5    Hwang, Y.N.6
  • 8
    • 30344457754 scopus 로고    scopus 로고
    • Highly scalable on-axis confined structure for high density PRAM beyond 256 Mb
    • Cho S.L., et al. Highly scalable on-axis confined structure for high density PRAM beyond 256 Mb. VLSI Tech Dig (2005) 96-97
    • (2005) VLSI Tech Dig , pp. 96-97
    • Cho, S.L.1
  • 9
    • 30344435158 scopus 로고    scopus 로고
    • Ahn SJ et al. Highly reliable 50 nm contact cell technology for 256 Mb PRAM. In: Symp on VLSI Tech: 2005. p. 98-9.
    • Ahn SJ et al. Highly reliable 50 nm contact cell technology for 256 Mb PRAM. In: Symp on VLSI Tech: 2005. p. 98-9.
  • 11
    • 0141830841 scopus 로고    scopus 로고
    • Horii H, Yi JH, Park JH, Ha YH, Baek IG, Park SO et al. A novel cell technology using N-doped GeSbTe films for phase change RAM. In: Symp on VLSI Tech Dig; 2003. p. 177-8.
    • Horii H, Yi JH, Park JH, Ha YH, Baek IG, Park SO et al. A novel cell technology using N-doped GeSbTe films for phase change RAM. In: Symp on VLSI Tech Dig; 2003. p. 177-8.
  • 12
    • 33847726227 scopus 로고    scopus 로고
    • Oxygen-doped Ge2Sb2Te5 phase-change memory cells featuring 1.5-V/100-mA standard 0.13 mm CMOS operations
    • Matsuzaki N., Kurotsuchi K., Matsui Y., Tonomura O., Yamamoto N., Fujisaki Y., et al. Oxygen-doped Ge2Sb2Te5 phase-change memory cells featuring 1.5-V/100-mA standard 0.13 mm CMOS operations. IEDM Tech Dig (2005) 738-741
    • (2005) IEDM Tech Dig , pp. 738-741
    • Matsuzaki, N.1    Kurotsuchi, K.2    Matsui, Y.3    Tonomura, O.4    Yamamoto, N.5    Fujisaki, Y.6
  • 14
    • 39549112173 scopus 로고    scopus 로고
    • Song Y, Ryoo K, Hwang Y, Jeong C, Lim D, Park S et al. Highly reliable 256 Mb PRAM with advanced ring contact technology and novel encapsulating technology. In: Symp VLSI Tech Dig; 2006. p. 118-9.
    • Song Y, Ryoo K, Hwang Y, Jeong C, Lim D, Park S et al. Highly reliable 256 Mb PRAM with advanced ring contact technology and novel encapsulating technology. In: Symp VLSI Tech Dig; 2006. p. 118-9.
  • 15
    • 17644438389 scopus 로고    scopus 로고
    • A GeSbTe phase-change memory cell featuring a tungsten heater electrode for low-power, highly stable, and short-read-cycle operations
    • Takaura N., Terao M., Kurotsuchi K., Yamauchi T., Tonomura O., and Hanaoka Y. A GeSbTe phase-change memory cell featuring a tungsten heater electrode for low-power, highly stable, and short-read-cycle operations. IEDM Tech Dig 6 (2003) 897
    • (2003) IEDM Tech Dig , vol.6 , pp. 897
    • Takaura, N.1    Terao, M.2    Kurotsuchi, K.3    Yamauchi, T.4    Tonomura, O.5    Hanaoka, Y.6
  • 16
    • 37549012274 scopus 로고    scopus 로고
    • Bergmann R, Breitwisch M, Burr GW, Cheek R, Chen CF, Chen SH et al. Novel one-mask self-heating pillar phase change memory. In: Symp VLSI Tech Dig; 2006. p. 120-1.
    • Bergmann R, Breitwisch M, Burr GW, Cheek R, Chen CF, Chen SH et al. Novel one-mask self-heating pillar phase change memory. In: Symp VLSI Tech Dig; 2006. p. 120-1.
  • 17
    • 4544229593 scopus 로고    scopus 로고
    • Pellizzer F, Pirovano A, Ottogalli F, Magistretti M, Scaravaggi M, Zuliani P et al. Novel μTrench phase-change memory cell for embedded and stand-alone non-volatile memory applications. In: Symp on VLSI Tech Dig; 2004. p. 18-9.
    • Pellizzer F, Pirovano A, Ottogalli F, Magistretti M, Scaravaggi M, Zuliani P et al. Novel μTrench phase-change memory cell for embedded and stand-alone non-volatile memory applications. In: Symp on VLSI Tech Dig; 2004. p. 18-9.
  • 18
    • 35748985544 scopus 로고    scopus 로고
    • Phase-change materials for rewriteable data storage
    • Wuttig M., and Yamada N. Phase-change materials for rewriteable data storage. Nat Mater 6 (2007)
    • (2007) Nat Mater , vol.6
    • Wuttig, M.1    Yamada, N.2
  • 19
    • 21644477080 scopus 로고    scopus 로고
    • Electrothermal and phase-change dynamics in chalcogenide-based memories
    • Lacaita A.L., et al. Electrothermal and phase-change dynamics in chalcogenide-based memories. IEDM Tech Dig 5 (2004) 911-914
    • (2004) IEDM Tech Dig , vol.5 , pp. 911-914
    • Lacaita, A.L.1
  • 20
    • 0000984849 scopus 로고    scopus 로고
    • 5 sputtered thin films for use in optical memory
    • 5 sputtered thin films for use in optical memory. J Appl Phys 88 12 (2000) 7020-7028
    • (2000) J Appl Phys , vol.88 , Issue.12 , pp. 7020-7028
    • Yamada, N.1    Matsunaga, T.2
  • 23
    • 0001590784 scopus 로고
    • Simple band model for amorphous semiconducting alloys
    • Cohen M.H., Fritzsche H., and Ovshinsky S.R. Simple band model for amorphous semiconducting alloys. Phys Rev Lett 22 (1969) 1065-1068
    • (1969) Phys Rev Lett , vol.22 , pp. 1065-1068
    • Cohen, M.H.1    Fritzsche, H.2    Ovshinsky, S.R.3
  • 24
    • 0031268714 scopus 로고    scopus 로고
    • Experimental and theoretical investigations of laser-induced crystallization and amorphization in phase-change optical recording media
    • Peng C., Cheng L., and Mansuripur M. Experimental and theoretical investigations of laser-induced crystallization and amorphization in phase-change optical recording media. J Appl Phys 82 9 (1997) 4183-4191
    • (1997) J Appl Phys , vol.82 , Issue.9 , pp. 4183-4191
    • Peng, C.1    Cheng, L.2    Mansuripur, M.3
  • 25
    • 50649113089 scopus 로고    scopus 로고
    • Russo U, Redaelli A, Ielmini D, Lacaita AL. Geometry and material optimization for programming current scaling in phase-change memory. In: International conference on memory technology and design, ICMTD; 2007.
    • Russo U, Redaelli A, Ielmini D, Lacaita AL. Geometry and material optimization for programming current scaling in phase-change memory. In: International conference on memory technology and design, ICMTD; 2007.
  • 27
    • 50649101522 scopus 로고    scopus 로고
    • ITRS 2006 Update, available online at .
    • ITRS 2006 Update, available online at .
  • 29
    • 50249177041 scopus 로고    scopus 로고
    • Physical interpretation, modeling and impact on phase change memory (PCM) reliability of resistance drift due to chalcogenide structural relaxation
    • Ielmini D., Lavizzari S., Sharma D., and Lacaita A.L. Physical interpretation, modeling and impact on phase change memory (PCM) reliability of resistance drift due to chalcogenide structural relaxation. IEDM Tech Dig 77 (2007) 3
    • (2007) IEDM Tech Dig , vol.77 , pp. 3
    • Ielmini, D.1    Lavizzari, S.2    Sharma, D.3    Lacaita, A.L.4
  • 30
    • 33847681762 scopus 로고    scopus 로고
    • Recovery and drift dynamics of resistance and threshold voltages in phase-change memories
    • Ielmini D., Lacaita A.L., and Mantegazza D. Recovery and drift dynamics of resistance and threshold voltages in phase-change memories. IEEE Trans Electron Dev 54 (2007) 308
    • (2007) IEEE Trans Electron Dev , vol.54 , pp. 308
    • Ielmini, D.1    Lacaita, A.L.2    Mantegazza, D.3
  • 31
    • 46049098615 scopus 로고    scopus 로고
    • Physics-based analytical model of chalcogenide-based memories for array simulation
    • Ielmini D., and Zhang Y. Physics-based analytical model of chalcogenide-based memories for array simulation. IEDM Tech Dig (2006) 401-404
    • (2006) IEDM Tech Dig , pp. 401-404
    • Ielmini, D.1    Zhang, Y.2
  • 32
    • 34248373793 scopus 로고    scopus 로고
    • Evidence for trap-limited transport in the sub-threshold conduction regime of chalcogenide glasses
    • Ielmini D., and Zhang Y. Evidence for trap-limited transport in the sub-threshold conduction regime of chalcogenide glasses. Appl Phys Lett 90 (2007) 102-192
    • (2007) Appl Phys Lett , vol.90 , pp. 102-192
    • Ielmini, D.1    Zhang, Y.2
  • 33
    • 50649097515 scopus 로고    scopus 로고
    • Mantegazza D, Ielmini D, Pirovano A, Lacaita AL, Varesi E, Pellizzer F et al. Effects of the crystallization statistics on programming distributions in phase-change memory arrays. In: International conference on memory technology and design Tech Dig; 2007. p. 43-6.
    • Mantegazza D, Ielmini D, Pirovano A, Lacaita AL, Varesi E, Pellizzer F et al. Effects of the crystallization statistics on programming distributions in phase-change memory arrays. In: International conference on memory technology and design Tech Dig; 2007. p. 43-6.
  • 34
    • 50649088010 scopus 로고    scopus 로고
    • Mantegazza D, Ielmini D, Varesi E, Pirovano A, Lacaita AL. Statistical analysis and modeling of programming and retention in phase change memory arrays. International Electron Device Meeting Tech Dig; 2007.
    • Mantegazza D, Ielmini D, Varesi E, Pirovano A, Lacaita AL. Statistical analysis and modeling of programming and retention in phase change memory arrays. International Electron Device Meeting Tech Dig; 2007.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.