Partial crystallization of HfO2 for two-bit/four-level SONOS-type flash memory

IEEE Transactions on Electron Devices

Volumn 54, Issue 12, 2007, Pages 3177-3185

  Zhang, Gang ^a   Samanta, Santanu Kumar ^b,c   Singh, Pawan Kishore ^d   Ma, Fa Jun ^c   Yoo, Min Tae ^e   Roh, Yonghan ^e   Yoo, Won Jong ^a  

^a Sungkyunkwan University   (South Korea)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c CYPRESS SEMICONDUCTOR   (United States)

^d INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

^e Sungkyunkwan University   (South Korea)

Author keywords

Crystallization; Flash memories; Flash memory; HfO2; Partial crystallization; Two bit four level properties

Indexed keywords

CRYSTALLIZATION; FLASH MEMORY; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; HOT ELECTRONS; ROM;

CHANNEL HOT ELECTRON INJECTION PROGRAMMING; HOT HOLE INJECTION ERASING; MEMORY WINDOW; PARTIAL CRYSTALLIZATION;

SEMICONDUCTING ORGANIC COMPOUNDS;

EID: 38149096275     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.908863     Document Type: Article

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