Novel ultra-low voltage and high-speed programming/erasing schemes for SONOS flash memory with excellent data retention

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 457-460

  Chung, Steve S ^a   Tseng, Y H ^b   Lai, C S ^b   Hsu, Y ^c   Ho, Eric ^c   Chen, Terry ^c   Peng, L C ^c   Chu, C H ^c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b CHANG GUNG UNIVERSITY   (Taiwan)

^c ProMOS Technology Inc   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE EQUIPMENT; ELECTRON DEVICES; ELECTRON INJECTION; ELECTRONS; SPEED;

CELL OPERATIONS; CHANNEL HOT ELECTRON; DATA-RETENTION; HIGH SPEEDS; HOT HOLE INJECTION; LOW VOLTAGES; OPERATION SCHEMES; SONOS FLASH MEMORY; TUNNEL OXIDE]; ULTRA-FAST; ULTRA-LOW-VOLTAGE;

FLASH MEMORY;

EID: 50249132579     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4418972     Document Type: Conference Paper

References (8)

1. B. Eitan et al., in IEEE EDL, Vol. 21, p. 543, 2000.
2. T. Y. Chan et al., IEEE EDL, V0. 18, p. 93, 1987.
3. M. K. Cho et al., IEEE EDL, Vol. 24, p. 260, 2003.
4. Z. Liu et al., in Symp. on VLSI Tech., p. 17, 1999.
5. S.-H. Gu et al., in IEEE ED, Vol. 53, p. 103, 2006.
6. H. Pang et al., Proceedings of ESSDERC, Grenoble, France, p. 2.C.4, 2005.
7. M. Rosmeulen et al., Solid-State Electronics, p. 1525, 2004.
8. C. Chan et al., in IEEE ED, Vol.45, p.1524, 1998.