A novel NAND-type PHINES nitride trapping storage flash memory cell with physically 2-bits-per-cell storage, and a high programming throughput for mass storage applications

Digest of Technical Papers - Symposium on VLSI Technology

Volumn 2005, Issue , 2005, Pages 116-117

  Yeh, C C ^a   Wang, Tahui ^a   Liao, Y Y ^a   Tsai, W J ^a   Lu, T C ^a   Chen, M S ^a   Chen, Y R ^a   Chen, K F ^a   Han, Z T ^a   Wong, M S ^a   Hsu, S M ^a   Zous, N K ^a   Ou, T F ^a   Ting, Wenchi ^a   Ku, Joseph ^a   Lu, Chih Yuan ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

ARRAYS; COMPUTER PROGRAMMING; LOGIC GATES; NITRIDES; THROUGHPUT;

BAND-TO-BAND (BTB); HOT-HOLE (HH) INJECTION; NITRIDE TRAPPING; PROGRAMMING THROUGHPUT;

FLASH MEMORY;

EID: 33745180537     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2005.1469234     Document Type: Conference Paper

References (4)

1. Y.S. Yim, et al, IEDM Tech. Dig., 34-1, 2003
2. J.D. Lee, et al, IEEE EDL, p.264, 2002
3. C.H. Lee, et al, SSDM, p. 162, 2002
4. C.C. Yeh, et al. IEDM Tech. Dig., 37-4, 2002