Multi-level p+ tri-gate SONOS NAND string arrays

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Friederich, C ^a   Specht, M ^a   Lutz, T ^a   Hofmann, F ^a   Dreeskornfeld, L ^a   Weber, W ^a   Kretz, J ^a   Melde, T ^a   Rosner W ^a   Landgraf, E ^a   Hartwich, J ^a   Stadele M ^a   Risch, L ^a   Richter, D ^a  

^a QIMONDA DRESDEN GMBH AND CO OHG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DEVICES; NONMETALS; OPTICAL DESIGN; SILICON; THRESHOLD VOLTAGE;

GA TE LENGTHS; HIGH DENSITY DATA FLASH; MULTI-LEVEL; OXIDE LAYERS; SILICON-OXIDE-NITRIDE-OXIDE-SILICON; THRESHOLD VOLTAGE SHIFTS; TRI-GATE;

NITRIDES;

EID: 46049105352     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346946     Document Type: Conference Paper

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