The nature of HT Vt shift in NROM memory transistors

IEEE Transactions on Electron Devices

Volumn 53, Issue 2, 2006, Pages 304-313

  Fuks, David ^a   Kiv, Arnold ^a   Roizin, Yakov ^b   Gutman, Micha ^b   Avichail Bibi, Rachel ^a   Maximova, Tatyana ^a  

^a BEN GURION UNIVERSITY OF THE NEGEV   (Israel)

^b TOWER SEMICONDUCTOR LTD   (Israel)

Author keywords

Nonvolatile memory (NVM) transistors; NROM; Reliability modeling; Semiconductor memories; Trapping

Indexed keywords

COMPUTER SIMULATION; DATA STORAGE EQUIPMENT; ELECTRON TRAPS; ELECTRONS; FLASH MEMORY; TRANSISTORS;

NONVOLATILE MEMORY (NVM) TRANSISTORS; RELIABILITY MODELING; SEMICONDUCTOR MEMORIES; TRAPPING;

NONVOLATILE STORAGE;

EID: 31744451477     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.862236     Document Type: Article

References (29)

1. M. H. White, D. A. Adams, and J. Bu, "On the go with SONOS," IEEE Circuits & Devices, pp. 22-31, Jul. 2000.
2. T. Y. Chan, K. K. Young, and C. Hu, "A true single-transistor oxide-nitride-oxide E EPROM device," IEEE Electron Device Lett., vol. 8, no. 3, pp. 93-95, Mar. 1987.
3. M. K. Cho and D. M. Kim, "High performance SONOS memory cells free of drain turn-on and over-erase: Compatibility issue with current flash technology," IEEE Electron Device Lett., vol. 21, no. 8, pp. 399-401, Aug. 2000.
4. B. Eitan, "Non-Volatile Semiconductor Memory Cell Utilizing Asymmetrical Charge Trapping," US Patent, No 5.768.192, Jun. 1998.
5. B. Eitan, P. Paean, I. Bloom, E. Aloni, A. Frommer, and D. Finzi, "NROM: A novel localized trapping, 2 bit nonvolatile memory cell," IEEE Electron Device Lett., vol. 21, no. 7, pp. 543-545, Jul. 2000.
6. K. Honda and Y. Cho, "Visualization of electrons and holes localized in the gate thin film of metal-oxide nitride-oxide semiconductor type flash memory by using scanning nonlinear microscopy," in Proc. MRS Symp., vol. 803, 2004, pp. 4.2.1-4.2.7.
7. M. S. Liang and T. S. Lee, "A hot-hole erasable memory cell," IEEE Electron Device Lett., vol. 7, no. 8, pp. 463-463, Aug. 1986.
8. Y. L. Chu and C. Y. Wu, "A new observation of band-to-band tunneling induced hot-carrier stress using charge-pumping technique," IEEE Electron Device Lett., vol. 21, no. 3, pp. 123-126, Mar. 2000.
9. W. J. Tsai, N. K. Zous, C. J. Liu, C. C. Liu, C. H. Chen, T. Wang, S. Pan, and C. Y. Lu, "Data retention behavior of a SONOS type two-bit storage FLASH memory cell," in IEDM Tech. Dig., Dec. 2001, pp. 32.6.1-32.6.4.
10. Y. Roizin, M. Gutman, E. Aloni, V. Kayris, and R. Zisman, "Retention characteristics of microFLASH memory," in Proc. IEEE Non-Volatile Memory Workshop, 2001, pp. 125-128.
11. M. Janai, "Data retention, endurance and acceleration factors of NROM devices," in Proc. IEEE Int. Reliab. Phys. Seminar, 2003, pp. 502-503.
12. S. Manzini and A. Modelli, "Tunneling discharge of trapped holes in silicon dioxide," in Insulation Films of Semiconductors, J. F. Verwij and Wolters, Eds. Amsterdam, The Netherlands: Elsevier, 1983, pp. 112-112.
13. C. C. Yen et al., "Novel operation schemes to improve device reliability in a localized trapping storage SONOS-type FLASH memory," in IEDM Tech. Dig., Dec. 2003, pp. 7.5.1-7.5.4.
14. eff measurements in two bit microFLASH memory cells," in Proc. AIP, 2001, pp. 181-185.
15. M. Rosmeulen, I. Crupi, J. V. Houdt, and K. De Meyer, "Spatial characterization of the local charge-distribution in silicon-rich-oxide channel-hot-electron injection based nonvolatile-memory cells using the charge pumping technique," in Proc. NVSMW, Feb. 2003, pp. 81-82.
16. E. Lusky, Y. Shacham-Diamand, I. Bloom, and B. Eitan, "Characterization of channel hot electron injection by the subthreshold slope of NROM™ device," IEEE Electron Device Lett., vol. 22, no. 11, pp. 556-558, Nov. 2001.
17. T. Wang, W. J. Tsai, S. H. Gu, C. T. Chan, C. C. Yeh, N. K. Zous, T. C. Lu, S. Pan, and C. Y. Lu, "Reliability models of data retention and read-disturb in 2-bit nitride storage FLASH memory cells (Invited Paper)," in IEDM Tech. Dig., Dec. 2003, pp. 7.4.1-7.4.4.
18. C. M. Yih, S. M. Cheng, and S. S. Chung, "A new approach to simulating n-MOSFET gate current degradation by including hot-electron induced oxide damage," IEEE Trans. Electron Devices, vol. 45, no. 11, pp. 2343-2348, Nov. 1998.
19. t drift of cycled two bit per cell microFLASH cells," in Proc. SSDM, Tokyo, Japan, Sep. 2003, pp. 228-230.
20. T. Vogelsang and W. Hansch, "The electron high-energy distribution function: A comparison of analytical models with Monte Carlo calculations," J. Appl. Phys., vol. 69, pp. 3592-3595, Mar. 1991.
21. T. H. Ning, C. M. Osburn, and H. N. Yu, "Emission probability of hot electrons from silicon into silicon dioxide," J. Appl. Phys., vol. 48, pp. 286-293, Jan. 1977.
22. C. Hu, S. C. Tam, F. C. Hsu, P. K. Ko, T. Y. Chan, and K. W. Terrill, "Hot-Electron-Induced MOSFET degradation - Model, monitor, and improvement," IEEE Solid-State Circuits, vol. 20, no. 2, pp. 295-305, Feb. 1985.
23. M. S. Liang, C. Chang, W. Yang, C. Hu, and R. W. Brodersen, "Hot carriers induced degradation in thin gate oxide MOSFETs," in IEDM Tech. Dig., 1983, pp. 186-186.
24. J. S. Sim, Y. K. Lee, J. D. Lee, and B. G. Park, "Observation of the lateral redistribution of locally trapped charge in SONOS memory cells,", SMDL Annual Report, 2003.
25. Y. Roizin, R. Daniel, S. Greenberg, M. Gutman, M. Lisiansky, V. Kairys, E. Pikhay, and P. Zisman, "Interface traps and reliability performance of microFLASH® memory," in Proc. 20th NVSMW, 2004, pp. 85-87.
26. A. Shappir, E. Luski, I. Bloom, G. Cohen, and B. Eitan, "Retention after cycling in the NROM nonvolatile memory device," in Peoc. 20th NVSMW, 2004, pp. 77-78.
27. Daniel, Y. Shaham-Diamand, and Y. Roizin, "Interface states in cycled hot electron injection program/hot hole erase silicon-oxide-nitride-oxide-silicon memories," Appl. Phys. Lett., vol. 85, pp. 6266-6268, 2004.
28. L. Larcher, G. Verzellesi, P. Pavan, E. Lusky, I. Bloom, and B. Eitan, "Impact of programming charge distribution on threshold voltage and subthreshold slope of NROM memory cells," IEEE Trans. Electron Devices, vol. 49, no. 11, pp. 1939-1946, Nov. 2002.
29. D. Fuks, A. Kiv, T. Maximova, R. Bibi, Y. Roizin, and M. Gutman, "Computer model of the trapping media in microFLASH memory cells," J. Computer-Aided Mater. Design, vol. 9, pp. 21-32, 2002.