SCOPUS 정보 검색 플랫폼

Volumn 11, Issue 4, 2007, Pages 519-528

Improvement of multiple-level cell endurance of NAND flash memories using HfO2/ZrO2 charge storage layer

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; FLASH MEMORY; HAFNIUM OXIDES; HIGH-K DIELECTRIC; LOGIC GATES; NAND CIRCUITS; RELIABILITY; SILICON; ZIRCONIA;

CHARGE STORAGE; DEGRADATION FACTOR; ENDURANCE RELIABILITY; HIGH- K; MULTIPLE-LEVEL CELLS; NAND FLASH MEMORY; OVER-ERASURE; THERMALLY INDUCED;

SILICON COMPOUNDS;

EID: 45249098565 PISSN: 19385862 EISSN: 19386737 Source Type: Conference Proceeding
DOI: 10.1149/1.2779587 Document Type: Conference Paper

Times cited : (1)

References (13)

1
- 0030680435
- P. Candelier, F Mondon, B. Guillaumot, G. Reimbold, H Achard, F. Martin and J Hartmann, 1997 IEEE International Reliability Physics Symposium Proceeding, p. 104 (1997).
- (1997) 1997 IEEE International Reliability Physics Symposium Proceeding , pp. 104
- Candelier, P.¹ Mondon, F.² Guillaumot, B.³ Reimbold, G.⁴ Achard, H.⁵ Martin, F.⁶ Hartmann, J.⁷

2
- 84886448103
- S.-J. Shen, C.-S. Yang, Y.-S Wang, C.-H. Hsu, S.-D. Chang, N Rodjy and C. Wang, IEDM Tech. Dig., p. 287 (1997)
- (1997) IEDM Tech. Dig , pp. 287
- Shen, S.-J.¹ Yang, C.-S.² Wang, Y.-S.³ Hsu, C.-H.⁴ Chang, S.-D.⁵ Rodjy, N.⁶ Wang, C.⁷

3
- 45249110600
- submitted to
- G. Zhang, S.K. Samanta, P.K. Singh, F.-J. Ma, M.-T. Yoo, Y -H. Roh and W.J. Yoo, submitted to IEEE Trans. Electron Devices.
- IEEE Trans. Electron Devices
- Zhang, G.¹ Samanta, S.K.² Singh, P.K.³ Ma, F.-J.⁴ Yoo, M.-T.⁵ Roh, Y.-H.⁶ Yoo, W.J.⁷

4
- 0036865448
- L.-Y. Pan, J. Zhu, Z.-H Liu, Y. Zeng and J.-Z. Liu, IEEE Electron Device Lett., 23, 11, p. 652, (2002).
- (2002) IEEE Electron Device Lett , vol.23 , Issue.11 , pp. 652
- Pan, L.-Y.¹ Zhu, J.² Liu, Z.-H.³ Zeng, Y.⁴ Liu, J.-Z.⁵

5
- 0029493274
- M-H. Chi and A. Bergemont, IEDM Tech. Dig., p. 271 (1995).
- (1995) IEDM Tech. Dig , pp. 271
- Chi, M.-H.¹ Bergemont, A.²

6
- 0029707030
- Y.-J. Choi, K.-D. Suh, Y.-N. Koh, J.-W. Park, K.-J. Lee, Y.-J Cho and B.-H. Suh, VLSI Circuit Dig., p. 170 (1996).
- (1996) VLSI Circuit Dig , pp. 170
- Choi, Y.-J.¹ Suh, K.-D.² Koh, Y.-N.³ Park, J.-W.⁴ Lee, K.-J.⁵ Cho, Y.-J.⁶ Suh, B.-H.⁷

7
- 34249934007
- B. Eitan, G. Cohen, A. Shappir, E. Lusky, A. Givant, M. Janai, I. Bloom, Y. Polansky, O Dadashev, A. Lavan, R. Sahar and E Maayan, IEDM Tech. Dig., p. 547 (2005).
- (2005) IEDM Tech. Dig , pp. 547
- Eitan, B.¹ Cohen, G.² Shappir, A.³ Lusky, E.⁴ Givant, A.⁵ Janai, M.⁶ Bloom, I.⁷ Polansky, Y.⁸ Dadashev, O.⁹ Lavan, A.¹⁰ Sahar, R.¹¹ Maayan, E.¹²

8
- 33645745589
- W.-J. Tsai, N.-K Zous, T. Wang, Y.-H. Ku and C -Y. Lu, IEEE Trans. Electron Devices, 53, 4, p. 808, (2006).
- (2006) IEEE Trans. Electron Devices , vol.53 , Issue.4 , pp. 808
- Tsai, W.-J.¹ Zous, N.-K.² Wang, T.³ Ku, Y.-H.⁴ Lu, C.-Y.⁵

9
- 4344661847
- Y.-N. Tan, W.K. Chim, B.J. Cho and W.-K. Choi, IEEE Trans. Electron Devices., 51, 7, p 1143, (2004).
- (2004) IEEE Trans. Electron Devices , vol.51 , Issue.7 , pp. 1143
- Tan, Y.-N.¹ Chim, W.K.² Cho, B.J.³ Choi, W.-K.⁴

10
- 0035872897
- G D Wilk, R.M. Wallace and J.M. Anthony, J. Appl. Phys, 89, 10, p 5243, (2001).
- (2001) J. Appl. Phys , vol.89 , Issue.10 , pp. 5243
- Wilk, G.D.¹ Wallace, R.M.² Anthony, J.M.³

11
- 0004251298
- New York
- S. Dimitrijev, Understanding Semiconductor Devices, New York, 2000.
- (2000) Understanding Semiconductor Devices
- Dimitrijev, S.¹

12
- 84886448091
- Y. Kamakura, H Utsunomiya, T. Tomita, K Umeda and K. Taniguchi, IEDM Tech. Dig, p. 81 (1997).
- (1997) IEDM Tech. Dig , pp. 81
- Kamakura, Y.¹ Utsunomiya, H.² Tomita, T.³ Umeda, K.⁴ Taniguchi, K.⁵

13
- 31744451477
- D. Fuks, A Kiv, Y. Roizin, M Gutman, R.A. Bibi and T. Maximova, IEEE Trans. Electron Devices., 53, 2, p. 304, (2006)
- (2006) IEEE Trans. Electron Devices , vol.53 , Issue.2 , pp. 304
- Fuks, D.¹ Kiv, A.² Roizin, Y.³ Gutman, M.⁴ Bibi, R.A.⁵ Maximova, T.⁶

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.