Thick GaN grown on a nanoporous GaN template by hydride vapor phase epitaxy

Electrochemical and Solid-State Letters

Volumn 11, Issue 10, 2008, Pages

  Wang, Xinzhong ^a,b   Yu, Guanghui ^a   Lin, Chaotong ^a,b   Cao, Mingxia ^a,b   Gong, Hang ^a   Qi, Ming ^a   Li, Aizhen ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM GALLIUM NITRIDE; ARCHITECTURAL ACOUSTICS; CRYSTAL GROWTH; EPITAXIAL GROWTH; ETCHING; GALLIUM ALLOYS; GALLIUM COMPOUNDS; INDUCTIVELY COUPLED PLASMA; LIGHT METALS; MOLECULAR BEAM EPITAXY; NITRIDES; OXIDE FILMS; PHOTORESISTS; PLASMA ETCHING; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SINGLE CRYSTALS; VAPORS;

ANODIZED ALUMINUM OXIDE; CRYSTALLINE QUALITY; DISLOCATION DENSITIES; GALLIUM NITRIDE (GAN); GAN FILMS; GAN LAYERS; HIGH RESOLUTION X-RAY DIFFRACTION; HIGH-QUALITY; HYDRIDE VAPOR-PHASE EPITAXY; INDUCTIVELY COUPLED PLASMA ETCHING; MICRO-RAMAN SPECTROSCOPY; NANOPOROUS GAN; PROMISING TECHNIQUE; RED SHIFTING;

GALLIUM NITRIDE;

EID: 49749101708     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2943662     Document Type: Article

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