Charge transport diagnosis by: I-V (resistivity), screening and Debye length, mean free path, Mott effect and Bohr radius in InAs, In 0.53 Ga 0.47 As and GaAs MBE epitaxial layers

Applied Surface Science

Volumn 254, Issue 21, 2008, Pages 6736-6741

  Wolkenberg, Andrzej ^a   Przesławski, Tomasz ^a  

^a Department of Micro and Nanotechnology of Wide Bandgap Semiconductors   (Poland)

Author keywords

Hydrogenic donor; Impurity states; Mott concentration; Nonmetal metal transition; Variable range hopping

Indexed keywords

CARRIER TRANSPORT; DANGLING BONDS; GALLIUM ARSENIDE; INDIUM ARSENIDE; INDIUM PHOSPHIDE; MAGNETISM; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR ALLOYS;

HYDROGENIC DONOR; IMPURITY STATE; MOTT CONCENTRATION; NONMETAL-METAL TRANSITION; VARIABLE RANGE HOPPING;

III-V SEMICONDUCTORS;

EID: 49549108212     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.04.061     Document Type: Article

References (39)

1. Zhang R., Morrow N.V., Sapiro R.E., Berman P.R., and Raithel G. Opt. Commun. 275 (2007) 311
2. Goral K., Santos L., and Lewenstein M. Phys. Rev. Lett. 88 (2002) 170406
3. Kobori H., and Ohyama T. J. Phys. Chem. Sol. 58 (1997) 2065
4. Mott N.F. Phil. Mag. 6 (1964) 287
5. Mott N.F. Adv. Phys. 21 (1972) 785
6. Mott N.F. Metal-Insulator Transition. 2nd ed. (1990), Taylor and Francis, London
7. A. Luque López, A. Marti Vega, C. Cablero Trespo, E. Antolin Fernández, Suppression of Non-Radiative Recombination in Materials with Deep centers, WO Patent, WO/2007/068,775 (2007).
8. Yoshita M., Liu S.M., Okano M., Hayamizu Y., and Akiyama H. J. Phys.: Condens. Matter 19 (2007) 295217
9. Kancharia S.S., and Dagotto E. Phys. Rev. Lett. 98 (2007) 016402
10. Kim H.T., Youn D.H., Chae B.G., Kang K.Y., and Lim Y.S. J. Cryst. Growth 301/302 (2007) 252
11. Hayamizu Y., Yoshita M., Takahashi Y., Akiyama H., Ning C.Z., Pfeiffer L.N., and West K.W. Phys. Rev. Lett. 99 (2007) 167403
12. Fabrizio M. What can be learned about the Mott metal-to insulator transition. AIP Conf. Proc. 918 (2007) 3-81
13. Moore R.G., Zhang J., Nascimento V.B., Jin R., Guo J., Wang G.T., Fang Z., Mandrus D., and Plummer E.W. Science 318 (2007) 615
14. Alliev S.A., Kesamanly F.P., Lagunova T.S., and Nasledov D.N. Phys. Stat. Sol. 17 (1966) 105
15. Yamanouchi Ch., Mizuguchi K., and Sasaki W. J. Phys. Soc. Jpn. 22 (1967) 859
16. Pekarek T.M., Crooker B.C., Li S., McElfresh M., Chang J.C.P., McInturff D., Harmon E.S., Melloch M.R., and Woodall J.M. J. Appl. Phys. 81 (1997) 4869
17. Dziuba Z., Przeslawski T., Dybko K., Górska M., Marczewski J., and Regiński K. J. Appl. Phys. 85 (1999) 6619
18. Oberstar J.D., Streetman B.G., Baker J.E., and Williams P. J. Electrochem. Soc. 128 (1981) 1814
19. Brown A.S., Palmateer S.C., Wicks G.W., Eastman L.F., and Calawa A.R. J. Electron. Mater. 14 (1985) 367
20. Locquet J.P., Perret J., Fompeyrine J., Mächler E., Seo J.W., and Van Tendeloo G. Nature 394 (1998) 453
21. Mott N.F. Phil. Mag. 19 (1969) 835
22. Sasaki W. Phil. Mag. B 52 (1985) 427
23. Wolkenberg A., and Przeslawski T. Application of galvanomagnetic measurements in temperature range 70-300 K to MBE GaAs layers characterization. SPIE 2780 (1995) 170
24. Przeslawski T., Wolkenberg A., Regiński K., Kaniewski J., and Ba{ogonek}k-Misiuk J. Thin Solid Films 367 (2000) 232
25. Wolkenberg A., Przesławski T., Kaniewski J., Ba{ogonek}k-Misiuk J., and Regiński K. Mater. Sci. Eng. B 77 (2000) 250
26. Wolkenberg A., Przesławski T., Regiński K., and Kaniewski J. Mater. Sci. Eng. B 90 (2002) 176
27. Wolkenberg A., Przesławski T., Kaniewski J., and Regiński K. J. Phys. Chem. Sol. 64 (2003) 7
28. Przesławski T., Wolkenberg A., Kaniewski J., and Regiński K. Phys. Stat. Sol. C 1 (2004) 242
29. Wolkenberg A., Przesławski T., Kaniewski J., and Regiński K. Mater. Sci. Eng. B110 (2004) 79
30. Wolkenberg A., Przeslawski T., Kaniewski J., and Kowalczyk E. J. Appl. Phys. 99 (2006) 074106
31. Sondheimer E.H. The mean free path of electrons in metals. Adv. Phys. 1 (1952) 1
32. Efros A.L., and Shklovskii B.J. J. Phys. C 8 (1975) L49
33. Sajal P., Roy J.B., and Basu P.K. J. Appl. Phys. 69 (1991) 827
34. Shimogishi F., Mukai K., Fukushima S., and Otsuka N. Phys. Rev. B 65 (2002) 165311
35. Albuquerque H.A., de Oliveira A.G., Ribeiro G.M., da Silva R.L., Rodrigues W.N., and Rubinger R.M. J. Appl. Phys. 95 (2004) 3553
36. Rubinger R.M., Ribeiro G.M., de Oliveira A.G., Albuquerque H.A., da Silva R.L., Rubinger C.P.L., Rodrigues W.N., and Moreira M.V.B. Semicond. Sci. Technol. 21 (2006) 1681
37. Kaminska M., Weber E.R., Lilienthal-Weber Z., Leon R., and Rek Z.U. J. Vac. Sci. Technol. B 7 (1989) 710
38. Ekenstedt M.J., Songpongs P., and Andersson T.G. Appl. Phys. Lett. 61 (1992) 789
39. Kozłowska J., and Wolkenberg A. The Influence of the Dependence from the Temperature of the Effective Mass of Electrons on the Electron Hall Mobility in GaAs. Prace Instytutu Technologii Elektronowej No. 10 (1993)