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Physical Review B - Condensed Matter and Materials Physics

Volumn 65, Issue 16, 2002, Pages 1653111-1653115

Hopping conduction in GaAs layers grown by molecular-beam epitaxy at low temperatures

(4) Shimogishi, F a Mukai, K a Fukushima, S a Otsuka, N a

a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC DERIVATIVE; GALLIUM;

ARTICLE; ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; ENERGY; LOW TEMPERATURE; MOLECULAR DYNAMICS;

EID: 0037091829 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (13)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.