Reduction of variable range hopping conduction in low-temperature molecular-beam epitaxy GaAs

Journal of Applied Physics

Volumn 95, Issue 7, 2004, Pages 3553-3556

  Albuquerque, H A ^a   De Oliveira, A G ^a   Ribeiro, G M ^a   Da Silva, R L ^a   Rodriques, W N ^a   Rubinger, R M ^b  

^a FEDERAL UNIVERSITY OF MINAS GERAIS   (Brazil)

^b FEDERAL UNIVERSITY OF ITAJUBÁ   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPOSITION; ELECTRIC CONDUCTIVITY; HALL EFFECT; LOW TEMPERATURE EFFECTS; MICROANALYSIS; MOLECULAR BEAM EPITAXY; PHONONS; QUENCHING; SEMICONDUCTOR GROWTH; VAN DER WAALS FORCES;

MICROPROBE ANALYSIS; VARIABLE RANGE HOPPING (VRH);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 16544377818     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1650530     Document Type: Article

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