Growth and transport properties of relaxed epilayers of InAs on GaAs

Thin Solid Films

Volumn 367, Issue 1-2, 2000, Pages 232-234

  Przeslawski T ^a,c   Wolkenberg, A ^a   Reginski K ^a   Kaniewski, J ^a   Bak Misiuk J ^b  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^b INSTITUTE OF PHYSICS   (Poland)

^c NONE   (Poland)

Author keywords

Charge carriers transport in mechanically relaxed epilayers; High resolution X ray diffractometry and Hall effect measurements; Molecular beam epitaxy growth of InAs on GaAs

Indexed keywords

EID: 0343839971     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)00696-9     Document Type: Article

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