Thickness dependence of the structural and electrical properties of InAs layers epitaxially grown by MBE on GaAs (001)

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 77, Issue 3, 2000, Pages 250-254

  Wolkenberg, A ^a,b   Przeslawski, T ^a   Kaniewski, J ^a   Bak Misiuk, J ^c   Reginski K ^a  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^b CZESTOCHOWA UNIVERSITY OF TECHNOLOGY   (Poland)

^c INSTITUTE OF PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC STRUCTURE; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

FULL WIDTH AT HALF MAXIMUM;

SEMICONDUCTING FILMS;

EID: 0034269867     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00498-0     Document Type: Article

References (40)

1. Stradling R.A., Klipstein P.C. Growth and Characterisation of Semiconductors. 1990;165 AdamHilger, Bristol.
2. Wang P.D., Holmes S.N., Le T., Stradling R.A., Ferguson I.T., de Oliveira A.G. Semicond. Sci. Technol. 7:1992;767.
3. van der Merwe J.H. J. Appl. Phys. 34:1963;123.
4. Matthews J.W., Blakeslee A.E. J. Crystal Growth. 27:1974;118.
5. People R., Bean J.C. Appl. Phys. Lett. 47:1985;322.
6. T. Przeslawski, A. Wolkenberg, K. Regiński, J. Kaniewski, J. Bak-Misiuk, Growth and transport properties of relaxed epilayers of InAs on GaAs, The Third International Workshop on Molecular Beam Epitaxy Growth Physics and Technology, Warsaw, Poland, May 23-28, 1999, Thin Solid Films, 367 (2000) 232.
7. Davey J.E., Tiernan R.J., Pankey T., Montgomery M.D. Solid-State Electron. 6:1963;205.
8. Courvoisier J.C., Haidinger W., Jochems P.J.W., Tummers L.J. Solid-State Electron. 6:1963;265.
9. Johannessen J.S. Phys. Stat. Sol. A. 11:1972;469.
10. Johannessen J.S. Phys. Stat. Sol. A. 26:1974;K53.
11. Fang Z.M., Ma K.Y., Cohen R.M., Stringfellow G.B. Appl. Phys. Lett. 59:1991;1446.
12. Yano M., Nogami M., Matsushima Y.Y., Kimata M. Jpn. J. Appl. Phys. 16:1977;2131.
13. Kalem S. J. Appl. Phys. 66:1989;3097.
14. Kalem S. Semicond. Sci. Technol. 5:1990;S200.
15. Meggitt B.T., Parker E.H.C., King R.M. Appl. Phys. Lett. 33:1978;528.
16. Westwood D.I., Woolf D.A., Williams R.H. J. Crystal Growth. 98:1989;782.
17. de Lyon T.J., Woodall J.M., Kirchner P.D., McInturff D.T., Scilla G.J., Cardonne F. J. Vac. Sci. Technol. B9:1991;136.
18. Hartley F., Patai S. The Chemistry of Metal-Carbon Bond. 1982;53 Wiley, New York.
19. Schubert E.F. Doping in III-V Semiconductors. 1993;190 Cambridge University Press, Cambridge.
20. Grange J.D., Parker E.H.C., King R.M. J. Phys. D: Appl. Phys. 12:1979;1601.
21. Fawcett P.N., Joyce B.A., Zhang X., Pashley D.W. J. Crystal Growth. 116:1992;81.
22. Hooper S.E., Westwood D.I., Woolf D.A., Heghoyan S.S., Williams R.H. Semicond. Sci. Technol. 8:1993;1069.
23. Bak-Misiuk J., Kaniewski J., Domagala J., Regiński K., Adamczewska J., Trela J. Opto-Electron. Rev. 7:1999;107.
24. Fujita S., Nakaoka Y., Uemura T., Tabuchi M., Noda S., Takeda Y., Sasaki A. J. Crystal Growth. 95:1989;224.
25. Okamoto K., Hananoki R., Sakiyama K. Jpn. J. Appl. Phys. 33:1994;28.
26. Kubiak R.A.A., Parker E.H.C., Newstead S. Appl. Phys. A35:1984;61.
27. Holmes S., Stradling R.A., Wang P.D., Droopad R., Parker S.D., Williams R.L. Semicond. Sci. Technol. 4:1989;303.
28. Petritz R.L. Phys. Rev. 110:1958;1254.
29. Baliga B.J., Ghandhi S.K. J. Electrochem. Soc. 122:1975;683.
30. Cronin G.R., Conrad R.W., Borrello S.R. J. Electrochem. Soc. 113:1966;1336.
31. Godinho N., Brunnschweiler A. Solid State Electron. 13:1970;47.
32. Chang S.Z., Chang T.C., Shen J.L., Lee S.C., Chen Y.F. J. Appl. Phys. 74:1993;6912.
33. A. Wolkenberg, Avalanche breakdown on a semiconductor n-type gallium arsenide electrode, 22nd Meeting on the International Society of Electrochemistry, Dubrovnik, September, 1971, Croatica Chemica Acta 44 (1972) 53.
34. Wolkenberg A. Electrochim. Acta. 21:1976;1165.
35. Wolkenberg A. J. Electroanal. Chem. 85:1977;311.
36. Wolkenberg A. Phys. Stat. Sol. A. 79:1983;313.
37. 2/electrolyte interface characterization, Prace ITE CEMI, No. 9/10, (1983) 105-107 (in Polish).
38. Tu C.W., Liang B.W., Chin T.P. J. Crystal Growth. 136:1994;191.
39. Veuhoff E., Pletschen W., Balk P., Lüth H. J. Crystal Growth. 55:1981;30.
40. Hongwei Z., Yiping Z., Hongmei W., Jianrong D., Zhanping Z., Liang P., Meiying K. J. Crystal Growth. 191:1998;361.