A method for calculating the conductivity mobility spectrum using multi-carrier fitting

Materials Science and Engineering: B

Volumn 110, Issue 1, 2004, Pages 79-86

  Wolkenberg, Andrzej ^a   Przesławski, Tomasz ^a   Kaniewski, Janusz ^a   Reginski, Kazimierz ^a  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

Author keywords

Concentration; MBE epi gallium arsenide; Mobility; Mobility spectrum; Resistivity

Indexed keywords

CARRIER MOBILITY; FERMI LEVEL; GALVANOMAGNETIC EFFECTS; HALL EFFECT; LOW TEMPERATURE EFFECTS; MAGNETIC FIELD EFFECTS; MATHEMATICAL MODELS; NUMERICAL ANALYSIS; SCATTERING; SPECTRUM ANALYSIS;

MBE EPI-GALLIUM ARSENIDE; MOBILITY; MOBILITY SPECTRUM; RESISTIVITY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 2342646223     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2004.03.009     Document Type: Article

References (28)

1. Debye P.P., Conwell E.M. Phys. Rev. 93:1954;693.
2. H. Brooks, Theory of the Electrical Properties of Germanium and Silicon, Advanced Electronic Electron Physics, Academy Press, New York, 1955, pp. 87-177.
3. Herring C. J. Appl. Phys. 3:1960;1939.
4. Mansfield R. Proc. Phys. Soc. B. 69:1956;76.
5. D.C. Look, Electrical Characterization of GaAs Materials and Devices, Wiley, New York, 1989, pp. 69-90.
6. Ch.M. Wolfe, N. Holonyak, G.E. Stillman, Physical Properties of Semiconductors, Prentice Hall, 1989, pp. 175-202.
7. Meyer J.R., Bartoli F.J. Phys. Rev. B. 31:1985;2353.
8. Rode J.L., Knight S. Phys. Rev. B. 3:1971;2534.
9. Beer A.C. Solid State Phys. Suppl. 4:1963;18.
10. Beck W.A., Anderson J.R. J. Appl. Phys. 62:1987;54.
11. Antoszewski J., Seymour D.J., Faraone L., Meyer J.R., Hoffman C.A. J. Electron. Mater. 24:1995;1255.
12. Dziuba Z. Acta Phys. Polon. A80:1991;827.
13. Dziuba Z., Górska M. Phys. III France. 2:1992;99.
14. Dziuba Z., Antoszewski J., Dell J.M., Faraone L. J. Appl. Phys. 82:1997;2996.
15. Evaluation of multilayer transport properties using quantitative mobility spectrum analysis, LakeShore Cryotronics, Trade information.
16. A. Wolkenberg, T. Przesławski, Application of galvanomagnetic measurements in temperature range 70-300 K to MBE GaAs layers characterization, SPIE, 2780 (1995) 170.
17. Przeslawski T., Wolkenberg A., Regiński K., Kaniewski J., Bak-Misiuk J. Thin Solid Films. 367:2000;232.
18. Wolkenberg A., Przesławski T., Kaniewski J., Bak-Misiuk J., Regiński K. Mater. Sci. Eng. B. 77:2000;250.
19. Wolkenberg A., Przesławski T., Regiński K., Kaniewski J. Mater. Sci. Eng. B. 90:2002;176.
20. Wolkenberg A., Przesławski T., Kaniewski J., Regiński K. J. Phys. Chem. Sol. 64:2003;7.
21. J.S. Blakemore, Semiconductors Statistics, Pergamon, 1962.
22. Blakemore J.S. J. Appl. Phys. 53:1982;R123.
23. Blakemore J.S. J. Appl. Phys. 53:1982;520.
24. Petritz R.L. Phys. Rev. 110:1958;1254.
25. Debney B.T., Jay R. Solid State Electron. 23:1980;773.
26. Ashen D.J., Dean P.J., Hurle D.T.J., Mullin J.B., White A.M., Greene P.D. J. Phys. Chem. Sol. 36:1975;1041.
27. Wolkenberg A. Phys. Stat. Sol. 70:1983;313.
28. R.A. Smith, Semiconductors, Cambridge University Press, 1959, p. 121.