Electrical charge transport of n-InAs epitaxial films on GaAs

Materials Science and Engineering: B

Volumn 90, Issue 1-2, 2002, Pages 176-179

  Wolkenberg, A ^a,b   Przeslawski T ^a   Reginski, K ^a   Kaniewski, J ^a  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^b CZESTOCHOWA UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

Charge carrier concentration; Hall measurements; InAs layers; Nominally undoped samples

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CHARGE; FILM GROWTH; HALL EFFECT; MAGNETIC FIELDS; MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES; TRANSPORT PROPERTIES;

EPITAXIAL FILMS;

SEMICONDUCTING FILMS;

EID: 0037034696     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(01)00936-9     Document Type: Article

References (16)

1. Growth and transport properties of relaxed epilayers of InAs on GaAs, third international workshop on molecular beam epitaxy growth physics and technology