Temperature-dependent activation energy and variable range hopping in semi-insulating GaAs

Semiconductor Science and Technology

Volumn 21, Issue 12, 2006, Pages 1681-1685

  Rubinger, R M ^a   Ribeiro, G M ^b   De Oliveira, A G ^b   Albuquerque, H A ^b   Da Silva, R L ^b   Rubinger, C P L ^a   Rodrigues, W N ^b   Moreira, M V B ^b  

^a FEDERAL UNIVERSITY OF ITAJUBÁ   (Brazil)

^b FEDERAL UNIVERSITY OF MINAS GERAIS   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ELECTRIC CONDUCTANCE; ELECTRIC CONDUCTIVITY MEASUREMENT; HIGH TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR GROWTH;

BAND CONDUCTION; HOPPING PARAMETERS; VARIABLE RANGE HOPPING;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 33846851533     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/12/030     Document Type: Article

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