Observation of abrupt first-order metal-insulator transition in Be-doped GaAs

Journal of Crystal Growth

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 252-255

  Kim, Hyun Tak ^a   Youn, Doo Hyeb ^a   Chae, Byung Gyu ^a   Kang, Kwang Yong ^a   Lim, Yong Sik ^b  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Konkuk University   (South Korea)

Author keywords

A1. Avalanche breakdown; A1. First order metal insulator transition; A1. Molecular beam epitaxy; B1. GaAs; B3. Devices

Indexed keywords

BERYLLIUM; DOPING (ADDITIVES); ELECTRIC BREAKDOWN; ELECTRIC FIELDS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICES; THERMAL EFFECTS;

AVALANCHE BREAKDOWN; FIRST ORDER METAL INSULATOR TRANSITION; HOLE DOPING CONCENTRATION;

METAL INSULATOR TRANSITION;

EID: 33947406430     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.199     Document Type: Article

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