Sensitive In0.53Ga0.47As/InP (SI) magnetic field sensors

Physica Status Solidi C: Conferences

Volumn 1, Issue 2, 2004, Pages 242-246

  Przeslawski T ^a   Wolkenberg, A ^a,b   Reginski K ^a   Kaniewski, J ^a  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^b CZESTOCHOWA UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; HALL EFFECT; MAGNETIC FIELDS; MAGNETORESISTANCE; MICROSENSORS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

HALL DEVICES; LATTICE MATCH; MAGNETIC FIELD SENSORS; VOLTAGE SENSITIVITY;

HETEROJUNCTIONS;

EID: 2342515426     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303959     Document Type: Conference Paper

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