Negative magnetoresistance and impurity band conduction in an In0.53Ga0.47As/InP heterostructure

Journal of Applied Physics

Volumn 85, Issue 9, 1999, Pages 6619-6624

  Dziuba, Z ^a   Przeslawski T ^b   Dybko, K ^a   Gorska M ^a   Marczewski, J ^b   Reginski K ^b  

^a INSTITUTE OF PHYSICS   (Poland)

^b Department of Micro and Nanotechnology of Wide Bandgap Semiconductors   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; HALL EFFECT; INTERFACES (MATERIALS); MAGNETORESISTANCE; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

IMPURITY BAND CONDUCTION; NEGATIVE MAGNETORESISTANCE;

HETEROJUNCTIONS;

EID: 0032606709     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370170     Document Type: Article

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