T-shaped GaAs quantum-wire lasers and the exciton Mott transition

Journal of Physics Condensed Matter

Volumn 19, Issue 29, 2007, Pages

  Yoshita, M ^a,b   Liu, S M ^a,b   Okano, M ^a,b   Hayamizu, Y ^a,b   Akiyama, H ^a,b   Pfeiffer, L N ^c   West, K W ^c  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITONS; LASER APPLICATIONS; OPTICAL PUMPING; SEMICONDUCTING GALLIUM ARSENIDE;

FREE EXCITONS; LASING THRESHOLD; REFLECTION COATINGS; SHARP EXCITON PEAK;

SEMICONDUCTOR QUANTUM WIRES;

EID: 34547282644     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/19/29/295217     Document Type: Article

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