Analytical modeling of output conductance in long-channel halo-doped MOSFETs

IEEE Transactions on Electron Devices

Volumn 53, Issue 9, 2006, Pages 2091-2096

  Mudanai, Sivakumar ^a,b   Shih, Wei Kai ^b   Rios, Rafael ^a,b   Xi, Xuemei ^a,b   Rhew, Jung Hoon ^b   Kuhn, Kelin ^b   Packan, Paul ^b  

^a IEEE   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

Compact model; Halo; MOSFET; Output resistance degradation

Indexed keywords

ANALYTICAL DERIVATION; COMPACT MODELS; HALO TRANSISTORS; OUTPUT RESISTANCE DEGRADATION;

CIRCUIT SIMULATION; ELECTRIC CONDUCTANCE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; TWO DIMENSIONAL;

MOSFET DEVICES;

EID: 33947113783     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.880371     Document Type: Article

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