Quantum dashes on inp substrate for broadband emitter applications

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 14, Issue 4, 2008, Pages 1230-1238

  Ooi, Boon S ^a   Susanto Djie, Hery ^b   Wang, Yang ^c   Tan, Chee Loon ^a   Hwang, James C M ^a   Fang, Xiao Ming ^d   Fastenau, Joel M ^d   Liu, Amy W K ^d   Dang, Gerard T ^e   Chang, Wayne H ^e  

^a Lehigh University   (United States)

^b JDS UNIPHASE   (United States)

^c OptiComp Corporation   (United States)

^d IQE INC   (United States)

^e U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

Broadband semiconductor laser; Dash in well; InAs InAlGaAs; InAs InP; Quantum dash (Qdash); Quantum dots (QDs); Quantum well (QW); Supercontinuum; Superluminescent diode (SLD)

Indexed keywords

EMISSION SPECTROSCOPY; INDIUM ARSENIDE; OPTICAL DESIGN; POWER SPECTRUM; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM WELLS; TELECOMMUNICATION SYSTEMS;

APPLICATIONS.; BROADBAND SEMICONDUCTOR LASER; DASH-IN-WELL; GAUSSIAN EMISSION; INAS/INALGAAS; INAS/INP; INP SUBSTRATES; INTEGRATED POWER; INTER-BAND TRANSITIONS; PEAK WAVELENGTHS; QUANTUM DASH (QDASH); QUANTUM DASHES; QUANTUM DOTS (QDS); QUANTUM WELL (QW); SPECTRAL WIDTHS; SUPERCONTINUUM; SUPERLUMINESCENT DIODE (SLD); SUPERLUMINESCENT DIODES; SURFACE PHOTO-VOLTAGE SPECTROSCOPY; WELL STRUCTURE; WIDE BANDS;

FULL WIDTH AT HALF MAXIMUM;

EID: 48949086964     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2008.919277     Document Type: Article

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