Room-temperature broadband emission of an InGaAs/GaAs quantum dots laser

Optics Letters

Volumn 32, Issue 1, 2007, Pages 44-46

  Djie, H S ^a   Ooi, B S ^a   Fang, X M ^b   Wu, Y ^b   Fastenau, J M ^b   Liu, W K ^b   Hopkinson, M ^c  

^a Lehigh University   (United States)

^b IQE INC   (United States)

^c UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM; GALLIUM ARSENIDE; INDIUM; ORGANOARSENIC DERIVATIVE; QUANTUM DOT;

ARTICLE; CHEMISTRY; LASER; METHODOLOGY; NANOTECHNOLOGY; NORMAL DISTRIBUTION; OPTICS; TEMPERATURE;

ARSENICALS; GALLIUM; INDIUM; LASERS; NANOTECHNOLOGY; NORMAL DISTRIBUTION; OPTICS; QUANTUM DOTS; TEMPERATURE;

BROADBAND EMISSION; BROADBAND SIGNATURE; LASING WAVELENGTH; MONOLAYER DEPOSITION;

DEPOSITION; LASER BEAMS; LIGHT EMISSION; MONOLAYERS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS;

SEMICONDUCTOR LASERS;

EID: 33846999323     PISSN: 01469592     EISSN: 15394794     Source Type: Journal    
DOI: 10.1364/OL.32.000044     Document Type: Article

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