Quantum dot laser with 75 nm broad spectrum of emission

Optics Letters

Volumn 32, Issue 7, 2007, Pages 793-795

  Kovsh, A ^a   Krestnikov, I ^a   Livshits, D ^a   Mikhrin, S ^a   Weimert, J ^a   Zhukov, A ^b  

^a NL Nanosemiconductor GmbH   (Germany)

^b RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITED-STATE EMISSION BANDS; QUANTUM DOT LASERS; SPECTRAL POWER DENSITY;

ELECTRON ENERGY LEVELS; GROUND STATE; SEMICONDUCTOR QUANTUM DOTS; WAVELENGTH;

SEMICONDUCTOR LASERS;

EID: 33947145672     PISSN: 01469592     EISSN: 15394794     Source Type: Journal    
DOI: 10.1364/OL.32.000793     Document Type: Article

References (6)

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3. A. R. Kovsh, presented at the Nano-Optoelectronic Workshop, Berkeley, Calif., August 13-18, 2006.
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5. A. E. Zhukov, A. R. Kovsh, D. A. Livshits, V. M. Ustinov, and Zh. I. Alferov, Semicond. Sci. Technol. 18, 774 (2003).
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