Wavelength tuning of InAs/InAlGaAs quantum-dash-in-well laser using postgrowth intermixing

Electronics Letters

Volumn 43, Issue 1, 2007, Pages 33-35

  Djie, H S ^a   Wang, Y ^a   Ooi, B S ^a   Wang, D N ^a   Hwang, J C M ^a   Fang, X M ^b   Wu, Y ^b   Fastenau, J M ^b   Liu, W K ^b   Dang, G T ^c   Chang, W H ^c  

^a Lehigh University   (United States)

^b IQE INC   (United States)

^c U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRIC CURRENTS; LASER TUNING; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

BANDGAP TUNED LASERS; LIGHT-CURRENT CHARACTERISTICS; WAVELENGTH TUNING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33846247941     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20072837     Document Type: Article

References (6)

1. Wang, R.H.: et al. ' Room-temperature operation of InAs quantum-dash laser on InP (001) ', IEEE Photonics Technol. Lett., 2001, 13, p. 767-769 10.1109/68.935797 1041-1135
2. Aimez, V.: et al. ' Low-energy ion-implantation induced quantum well intermixing ', IEEE J. Sel. Top. Quantum Electron, 2002, 8, p. 870-879 10.1109/JSTQE.2002.800846 1077-260X
3. Djie, H.S., and Mei, T.: ' Plasma induced quantum well intermixing for monolithic photonic integration ', IEEE J. Sel. Top. Quantum Electron, 2005, 11, p. 373-382 10.1109/JSTQE.2005.845611 1077-260X
4. Wang, Y., Djie, H.S., and Ooi, B.S.: ' Group III intermixing in InAs/InAlGaAs quantum dots-in-well ', Appl. Phys. Lett., 2006, 88, p. 111110 10.1063/1.2181189 0003-6951
5. Djie, H.S.: et al. ' Group-III vacancy induced InGaAs quantum-dot interdiffusion ', Phys. Rev. B, 2006, 73, p. 155324 10.1103/PhysRevB.73.155324
6. Djie, H.S.: et al. ' Defect annealing of InAs/InAlGaAs quantum-dash-in-asymmetric-well laser ', IEEE Photonics Technol. Lett., 2006, 18, p. 2329-2331 10.1109/LPT.2006.885301 1041-1135