Role of C in the formation and kinetics of nanovoids induced by He + implantation in Si

Journal of Applied Physics

Volumn 104, Issue 2, 2008, Pages

  D'Angelo, D ^a   Mirabella, S ^a   Bruno, E ^a   Pulvirenti, G ^a,d   Terrasi, A ^a   Bisognin, G ^b   Berti, M ^b   Bongiorno, C ^c   Raineri, V ^c  

^a UNIVERSITY OF CATANIA   (Italy)

^b UNIVERSITY OF PADOVA   (Italy)

^c CNR IMM   (Italy)

^d STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON;

DOPED SI; NANO-VOIDS;

HELIUM;

EID: 48849091430     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2955707     Document Type: Article

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