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Volumn 55, Issue 8, 1997, Pages 5037-5044

Noble-gas-related defects in Si and the origin of the 1018 meV photoluminescence line

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Indexed keywords


EID: 0000478175     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.55.5037     Document Type: Article
Times cited : (62)

References (37)
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    • 0026138276 scopus 로고
    • For a recent review, see J. Weber, Physica B 170, 201 (1991).
    • (1991) Physica B , vol.170 , pp. 201
    • Weber, J.1
  • 12
    • 1542602344 scopus 로고
    • Fiz. Tekh. Poluprovodn. 18, 1676 (1984) [Sov. Phys. Semicond. 18, 1048 (1984)].
    • (1984) Sov. Phys. Semicond. , vol.18 , pp. 1048
  • 16
    • 0000861399 scopus 로고    scopus 로고
    • For the latest developments in the PRDDO methodology, see A. Derecskei-Kovacs and D.S. Marynick, Int. J. Quantum. Chem. 58, 193 (1996);A. Derecskei-Kovacs, D.E. Woon, and D.S. Marynick, Int. J. Quantum. Chem. (to be published).
    • (1996) Int. J. Quantum. Chem. , vol.58 , pp. 193
    • Derecskei-Kovacs, A.1    Marynick, D.2
  • 23
    • 85037886132 scopus 로고    scopus 로고
    • W.D. Sawyer (private communication).
    • Sawyer, W.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.