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Volumn 103, Issue 1, 2008, Pages

Localization of He induced nanovoids in buried Si1-xGe x thin films

Author keywords

[No Author keywords available]

Indexed keywords

HELIUM; NUCLEATION; TRANSMISSION ELECTRON MICROSCOPY;

EID: 38149035221     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2826994     Document Type: Article
Times cited : (10)

References (17)
  • 3
    • 0033725596 scopus 로고    scopus 로고
    • Symposium on VLSI Technology Digest of Technical Papers, Honolulu, HI
    • T. Mizuno, N. Sugiyama, H. Satake, and S. -I. Tagagi, Symposium on VLSI Technology Digest of Technical Papers, Honolulu, HI, 2000, pp. 210-211.
    • (2000) , pp. 210-211
    • Mizuno, T.1    Sugiyama, N.2    Satake, H.3    Tagagi, S.-I.4
  • 4
    • 0013035667 scopus 로고    scopus 로고
    • Properties of Advanced SemiconductorMaterials GaN, AlN, InN, BN, SiC, Si1-x Gex, edited by M. E. Levinshtein, S. L. Rumyantsev, and M. S. Shur (Wiley, New York)
    • F. Schaffler, Properties of Advanced SemiconductorMaterials GaN, AlN, InN, BN, SiC, Si1-x Gex, edited by, M. E. Levinshtein, S. L. Rumyantsev, and, M. S. Shur, (Wiley, New York, 2001), pp. 149-188.
    • (2001) , pp. 149-188
    • Schaffler, F.1
  • 13
    • 38149131829 scopus 로고
    • The Stopping Range of Ions in Solids (Pergamon, New York).
    • J. F. Ziegler, J. P. Biersack, and U. Littmark, The Stopping Range of Ions in Solids (Pergamon, New York, 1985).
    • (1985)
    • Ziegler, J.F.1    Biersack, J.P.2    Littmark, U.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.