Strain relaxation of pseudomorphic Si1-xGex/Si(1 0 0) heterostructures after hydrogen or helium ion implantation for virtual substrate fabrication

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 175-177, Issue , 2001, Pages 357-367

  Hollander B ^a   Lenk, St ^a   Mantl, S ^a   Trinkaus, H ^a   Kirch, D ^a   Luysberg, M ^a   Hackbarth, T ^b   Herzog, H J ^b   Fichtner, P F P ^c  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b DAIMLER AG   (Germany)

^c FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

Author keywords

Bubbles; Cavities; Molecular beam epitaxy; SiGe; Strain relaxation; Virtual substrate

Indexed keywords

CRYSTAL LATTICES; DISLOCATIONS (CRYSTALS); HELIUM; HYDROGEN; INTERFACES (MATERIALS); ION IMPLANTATION; MOLECULAR BEAM EPITAXY; RELAXATION PROCESSES; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; STRAIN; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

STRAIN RELAXATION;

HETEROJUNCTIONS;

EID: 0035301850     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)00559-6     Document Type: Conference Paper

References (25)