Corner Effect in Multiple-Gate SOI MOSFETs

IEEE International SOI Conference

Volumn , Issue , 2003, Pages 111-113

  Xiong, W ^a   Park, J W ^b   Colinge, J P ^c  

^a SEMATECH   (United States)

^b Kumoh National Institute of Technology   (South Korea)

^c University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY; THRESHOLD VOLTAGE;

CORNER CURRENTS;

MOSFET DEVICES;

EID: 0142154785     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/soi.2003.1242919     Document Type: Conference Paper

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