Characterization of arsenic dose loss at the Si/SiO2 interface

Journal of Applied Physics

Volumn 87, Issue 5, 2000, Pages 2255-2260

  Kasnavi, Reza ^a   Sun, Yun ^b   Mo, Renee ^b   Pianetta, Piero ^b   Griffin, Peter B ^a   Plummer, James D ^a  

^a Stanford University ^*  (United States)

^b SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000670225     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.372169     Document Type: Article

References (16)

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