Phosphorus donors in highly strained silicon

Physical Review Letters

Volumn 97, Issue 16, 2006, Pages

  Huebl, Hans ^a   Stegner, Andre R ^a   Stutzmann, Martin ^a   Brandt, Martin S ^a   Vogg, Guenther ^b   Bensch, Frank ^b   Rauls, Eva ^c   Gerstmann, Uwe ^d  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b FRAUNHOFER IZM   (Germany)

^c AARHUS UNIVERSITY   (Denmark)

^d UNIVERSITÉ PIERRE ET MARIE CURIE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

GREEN'S FUNCTION; GROWTH (MATERIALS); MAGNETIC RESONANCE; SILICON; STRAIN; SUBSTRATES; THIN FILMS;

HYPERFINE INTERACTION; PHOSPHORUS DONORS; STRAINED SILICON; VALLEY REPOPULATION;

PHOSPHORUS;

EID: 33750216376     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.97.166402     Document Type: Article

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