Charge enhancement effect in NMOS bulk transistors induced by heavy ion irradiation - Comparison with SOI

IEEE Transactions on Nuclear Science

Volumn 51, Issue 6 II, 2004, Pages 3255-3262

  Ferlet Cavrois, V ^a   Vizkelethy, G ^b   Paillet, P ^a   Torres, A ^a   Schwank, J R ^b   Shaneyfelt, M R ^b   Baggio, J ^a   De Du Port Pontcharra, J ^c   Tosti, L ^c  

^a CEA DIF   (France)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c CEA GRENOBLE   (France)

Author keywords

Bipolar amplification; Bulk and SOI transistors; Charge collection; Heavy ion irradiation; Transport by funnelling and diffusion

Indexed keywords

AMPLIFICATION; BIPOLAR TRANSISTORS; DIFFUSION; HEAVY IONS; IRRADIATION; SEMICONDUCTOR JUNCTIONS; SILICON ON INSULATOR TECHNOLOGY;

BIPOLAR AMPLIFICATION; BULK AND SOI TRANSISTORS; HEAVY ION IRRADIATION; TRANSPORT BY FUNNELLING AND DIFFUSION;

MOS DEVICES;

EID: 11044224982     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2004.839167     Document Type: Conference Paper

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