Effect of lightly Si doping on the minority carrier diffusion length in n-type GaN films

Applied Physics Letters

Volumn 88, Issue 25, 2006, Pages

  Zhao, D G ^a   Jiang, D S ^a   Yang, Hui ^a   Zhu, J J ^a   Liu, Z S ^a   Zhang, S M ^a   Liang, J W ^a   Hao, X P ^b   Wei, L ^b   Li, X ^c   Li, X Y ^c   Gong, H M ^c  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b INSTITUTE OF HIGH ENERGY PHYSICS   (China)

^c SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; DIFFUSION; GALLIUM NITRIDE; PHOTOVOLTAIC EFFECTS; SEMICONDUCTING FILMS; SILICON;

CARRIER DIFFUSION LENGTH; GA VACANCIES; PHOTOVOLTAIC SPECTRA; POSITRON ANNIHILATION;

SEMICONDUCTOR DOPING;

EID: 33745469529     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2213932     Document Type: Article

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