Influence of density of states on optical properties of GaSe thin film

Crystal Research and Technology

Volumn 39, Issue 2, 2004, Pages 137-142

  Thamilselvan, M ^a   Premnazeer, K ^a   Mangalaraj, D ^a,b   Narayandass, Sa K ^a   Yi, Junsin ^b  

^a BHARATHIAR UNIVERSITY   (India)

^b Sungkyunkwan University   (South Korea)

Author keywords

AES; Density of states (DOS); Gallium selenide thin film; Optical property

Indexed keywords

AMORPHOUS MATERIALS; AUGER ELECTRON SPECTROSCOPY; ELECTRONIC DENSITY OF STATES; INTERFEROMETRY; LIGHT ABSORPTION; PHASE TRANSITIONS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES; THERMAL EFFECTS; THICKNESS MEASUREMENT; X RAY DIFFRACTION ANALYSIS;

GALLIUM SELENIDE THIN FILM; MULTIPLE BEAM INTERFEROMETRY;

THIN FILMS;

EID: 1842453972     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/crat.200310161     Document Type: Article

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